Time-dependent leakage current behavior of integrated Ba0.7Sr0.3TiO3 thin film capacitors during stressing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 9 SUPPL. B, 1996, Pages 4919-4924

  Shimada, Yasuhiro ^a   Inoue, Atsuo ^a   Nasu, Toru ^a   Nagano, Yoshihisa ^a   Matsuda, Akihiro ^a   Arita, Koji ^a   Uemoto, Yasuhiro ^a   Fujii, Eiji ^a   Otsuki, Tatsuo ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

Conduction mechanism; Ferroelectric; Ferroelectric memory; Integrated ferroelectrics; Leakage current

Indexed keywords

CONDUCTION MECHANISM; FERROELECTRIC MEMORY; INTEGRATED FERROELECTRICS;

CAPACITORS; EXPERIMENTS; FERROELECTRICITY; LEAKAGE CURRENTS; STRESSES; TEMPERATURE DISTRIBUTION;

THIN FILMS;

EID: 0030234883     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.4919     Document Type: Article

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