Improved noise model for MESFETs and HEMTs in lower gigahertz frequency range

Electronics Letters

Volumn 28, Issue 7, 1992, Pages 611-612

  Heymann, P ^a   Prinzler, H ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

Field effect transistors; Modelling; Noise

Indexed keywords

NOISE, SPURIOUS SIGNAL; TRANSISTORS, FIELD EFFECT;

HEMT;

SEMICONDUCTOR DEVICES, MESFET;

EID: 0026826270     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19920385     Document Type: Article

References (9)

1. PRINZLER, H., and HEYMANN, P.: ‘Intrinsic noise sources of GaAsfield effect transistors: theory and experiments in the 10MHz-12 GHz frequency range’, Frequenz (in print)
2. PUCEL, R. A., HAUS, H. A., and STATZ, H.: ‘Signal and noise properties of GaAs-field effect transistors’, Adv. Electronics Electron Phys., 1974, 38, pp. 195-265
3. CAPPY, A.: ‘Noise modeling and measurement technique’, IEEE Trans., 1988, MTT-36, pp. 1-9
4. HEYMANN, P., KANTELBERG, C., and PRINZLER, H.: ‘Gate drain breakdown and microwave noise of GaAs-MESFETs’, Frequenz, 1989,43, pp. 112-115
5. PITZALIS, J.: ‘Demystifying noise circuit modeling and analysis’, Microwaves & RF, 1990, pp. 91-98
6. GUPTA, M. S., PITZSALIS, O., ROSENBAUM, S. E., and GREILING, P. T.: ‘Microwave noise characterization of GaAs-MESFETs: evaluation by on wafer low frequency output noise current’, IEEE Trans., 1987, MTT-35, pp. 1208-1217
7. TAYLOR, R. I., BROOKBANKS, D. M., and HOLDEN, A. J.: ‘Determining intrinsic noise parameters of 0.25µm gate pseudomorphic HEMT’, Electron. Lett., 1991, 27, pp. 1923-1924
8. POSPIESZALSKI, M.: ‘Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence’, IEEE Trans., 1989, MTT-37, pp. 1340-1350
9. FUJITSU Data Sheet FHX15/FHX16 Series (May 1991)