MICROWAVE NOISE CHARACTERIZATION OF GAAS MESFET'S: EVALUATION BY ON-WAFER LOW-FREQUENCY OUTPUT NOISE CURRENT MEASUREMENT.

IEEE Transactions on Microwave Theory and Techniques

Volumn MTT-35, Issue 12, 1987, Pages

  Gupta, Madhu S ^a   Pitzalis Jr , Octavius ^a   Rosenbaum, Steven E ^a   Greiling, Paul T ^a  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE DEVICES - MEASUREMENTS; MICROWAVE MEASUREMENTS - CURRENT; SEMICONDUCTING GALLIUM ARSENIDE; TRANSISTORS, FIELD EFFECT - MATHEMATICAL MODELS;

METAL SEMICONDUCTOR FET (MESFET); ON-WAFER MEASUREMENTS; SIMPLIFIED NOISE EQUIVALENT CIRCUIT; SUBMICROMETER-GATE-LENGTH MESFET;

SEMICONDUCTOR DEVICES, FIELD EFFECT;

EID: 0023578788     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (21)