Studies of p-GaN grown by MBE on GaAs(1 1 1)B

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 516-518

  Foxon, C T ^a   Cheng, T S ^a   Jeffs, N J ^a   Dewsnip, J ^a   Flannery, L ^a   Orton, J W ^a   Harrison, I ^a   Novikov, S V ^b   Ber, B Ya ^b   Kudriavtsev, Yu A ^b  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DIFFUSION IN SOLIDS; HALL EFFECT; MAGNESIUM; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; X RAY CRYSTALLOGRAPHY;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032094490     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00342-X     Document Type: Article

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