Growth and p-type doping of GaN on c-plane sapphire by nitrogen plasma-assisted molecular beam epitaxy

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 100-106

  Yoo, Myung C ^a   Park, M Y ^a   Kang, S K ^a   Cho, H D ^a   Lee, J W ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

GaN; MBE; p Doping

Indexed keywords

MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; PLASMA SOURCES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES; X RAY CRYSTALLOGRAPHY;

GALLIUM NITRIDE; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

SEMICONDUCTING FILMS;

EID: 0031142748     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01226-2     Document Type: Article

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