Surface state-derived electronic transitions of SiC(001)

Surface Science

Volumn 420, Issue 1, 1999, Pages 87-94

  Polyakov, V M ^a   Balster, T ^a   Sloboshanin, S ^a   Tautz, F S ^a   Ibach, H ^b   Schaefer, J A ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Computer simulations; Electron energy loss spectroscopy; Electron solid interactions; Low index single crystal surfaces; Metallic surfaces; Phonons; Plasmons; Silicon carbide; Surface waves

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; CRYSTAL ORIENTATION; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON TRANSITIONS; MATHEMATICAL MODELS; PHONONS; SILICON CARBIDE; SINGLE CRYSTALS; SURFACE STRUCTURE; SURFACE WAVES;

DIPOLE SCATTERING THEORY; ELECTRON-SOLID INTERACTIONS; FUCHS-KLIEWER PHONONS; PLASMONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032803349     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00828-0     Document Type: Article

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