Collective surface excitations in 3C-SiC(100)

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 347-350

  Balster, T ^a   Polyakov, V M ^a   Tautz, F S ^a   Ibach, H ^b   Schaefer, J A ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Band Bending; Calculation of Surface Loss Function; Collective Surface Excitations; Electron Density; Electron Density Profile; Electron Mobility; HREELS; Surface Reconstruction

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CARRIER CONCENTRATION; ELECTRON ENERGY LOSS SPECTROSCOPY; LOW ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; STOICHIOMETRY; SURFACE STRUCTURE;

BAND BENDING; COLLECTIVE SURFACE EXCITATIONS; ELECTRON DENSITY PROFILE; ELECTRON MOBILITY; SURFACE LOSS FUNCTION; SURFACE RECONSTRUCTION;

SILICON CARBIDE;

EID: 3743094907     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.347     Document Type: Article

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