A study of surface band bendings and charge densities of SiC(001) 2 × 1 and c(2 × 2) by high-resolution electron-energy-loss spectroscopy

Surface Science

Volumn 416, Issue 1-2, 1998, Pages 177-183

  Balster, T ^a   Polyakov, V M ^a   Ibach, H ^b   Schaefer, J A ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Computer simulations; Electron energy loss spectroscopy (EELS); Low index single crystal surfaces; Phonons; Plasmons; Silicon carbide; Single crystal surfaces; Surface waves

Indexed keywords

COMPUTER SIMULATION; CRYSTAL STRUCTURE; ELECTRON ENERGY LOSS SPECTROSCOPY; PHONONS; SILICON CARBIDE; SINGLE CRYSTALS;

HIGH-RESOLUTION ELECTRON ENERGY LOSS SPECTROSCOPY; PLASMONS; SURFACE RECONSTRUCTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032180915     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00575-5     Document Type: Article

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