Low-frequency noise characterization of dry-etched and wet-etched InAlAs/InGaAs HEMTs

Proceedings of the International Conference on Noise in Physical Systems and 1/f Fluctuations

Volumn , Issue , 1997, Pages 27-30

  Ren, L ^a   Duran, H C ^a   Beck, M ^a   Py, M A ^a   Ilegems, M ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; ELECTRON TRAPS; HYDROGEN; PASSIVATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

WET ETCHING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031295447     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)