SCOPUS 정보 검색 플랫폼

Solid-State Electronics

Volumn 39, Issue 8, 1996, Pages 1149-1153

Study of 1/f noise in InP grown by CBE

(2) Chen, X Y a Leys, M R a

a EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY; ELECTRON SCATTERING; SEMICONDUCTOR DOPING; SIGNAL NOISE MEASUREMENT; SIGNAL TO NOISE RATIO; SINGLE CRYSTALS; SPURIOUS SIGNAL NOISE;

HALL COEFFICIENT; HOOGE PARAMETER; LATTICE SCATTERING; LOW FREQUENCY NOISE; MOBILITY NOISE;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0030216339 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(96)00008-1 Document Type: Review

Times cited : (13)

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