A GSMBE Grown GaInP/GaAs Narrow Base DHBT Exhibiting N-Shape Negative Differential Resistance with Variable Peak-to-Valley Current Ratio up to 1 × 107 at Room Temperature

IEEE Electron Device Letters

Volumn 15, Issue 2, 1994, Pages 60-62

  Lu, S S ^a   Wang, Y J ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ETCHING; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE;

I-V CHARACTERISTICS; NEGATIVE DIFFERENTIAL RESISTANCE;

BIPOLAR TRANSISTORS;

EID: 0028375623     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.285373     Document Type: Article

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