The relaxation behavior of strained Si1-xGex layers at high temperature under hydrostatic pressure

Physica Status Solidi (A) Applied Research

Volumn 153, Issue 2, 1996, Pages 401-408

  Zaumseil, P ^a   Fischer, G G ^a   Quick, Ch ^a   Misiuk, A ^b  

^a Institute of Semiconductor Physics   (Germany)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HIGH TEMPERATURE OPERATIONS; HYDROSTATIC PRESSURE; INTERDIFFUSION (SOLIDS); PRESSURE EFFECTS; SEMICONDUCTOR GROWTH; STRESS RELAXATION; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

PSEUDOMORPHIC LAYERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0030080618     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.2211530214     Document Type: Article

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