High resolution determination of the Ge depth profile in SiGe heterobipolar transistor structures by x-ray diffractometry

Physica Status Solidi (A) Applied Research

Volumn 165, Issue 1, 1998, Pages 195-204

  Zaumseil, P ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURVE FITTING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; THICKNESS MEASUREMENT; X RAY CRYSTALLOGRAPHY;

SEMI KINEMATICAL THEORY; X RAY DOUBLE CRYSTAL DIFFRACTOMETRY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031699557     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199801)165:1<195::AID-PSSA195>3.0.CO;2-I     Document Type: Article

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