X-ray investigation of the relaxation and diffusion behaviour of strained SiGe/Si structures under hydrostatic pressure at high temperatures

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3179, Issue , 1997, Pages 172-175

  Zaumseil, P ^a   Fischer, G G ^a   Misiuk, A ^b  

^a IHP   (Germany)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

Diffusion; Hydrostatic pressure; Relaxation; Si1 xGex Si heterostructures

Indexed keywords

CRYSTALS; DIFFUSION; ELECTRIC CONDUCTIVITY; GERMANIUM; HETEROJUNCTIONS; HYDRAULICS; HYDRODYNAMICS; HYDROSTATIC PRESSURE; PRESSURE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR MATERIALS; SILICON;

ACTIVATION VOLUMES; ANNEALING EXPERIMENTS; ATMOSPHERIC CONDITIONS; HIGH HYDROSTATIC PRESSURES; HIGH PRESSURES; HIGH TEMPERATURES; INTER DIFFUSIONS; INTERDIFFUSION PROCESSES; RELAXATION; RELAXATION BEHAVIORS; ROOM TEMPERATURES; SI SUBSTRATES; SI1-XGEX/SI HETEROSTRUCTURES; SIGE/SI; STRONG ENHANCEMENTS; X-RAY DIFFRACTIONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0344044430     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.276220     Document Type: Conference Paper

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