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Volumn 11, Issue 8, 1999, Pages 964-966

Continuous-wave type-II 'W' lasers emitting at λ = 5.4-7.1 μm

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; HEAT SINKS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; OPTICAL PUMPING; PULSED LASER APPLICATIONS; QUANTUM WELL LASERS; SEMICONDUCTING DIAMONDS; SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032689233     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.775314     Document Type: Article
Times cited : (21)

References (18)
  • 1
    • 0016535480 scopus 로고
    • Efficient InSb laser with resonant longitudinal optical pumping
    • N. Menyuk, A. S. Pine, and A. Mooradian, "Efficient InSb laser with resonant longitudinal optical pumping," IEEE J. Quantum Electron., vol. 11, pp. 477-481, 1975.
    • (1975) IEEE J. Quantum Electron. , vol.11 , pp. 477-481
    • Menyuk, N.1    Pine, A.S.2    Mooradian, A.3
  • 5
  • 8
    • 0032484779 scopus 로고    scopus 로고
    • Growth and characterization of InAs/InGaSb/InAs/AlSb IR laser structures
    • M. J. Yang, W. J. Moore, B. R. Bennett, and B. V. Shanabrook, "Growth and characterization of InAs/InGaSb/InAs/AlSb IR laser structures," Electron. Lett., vol. 34, pp. 270-272, 1998.
    • (1998) Electron. Lett. , vol.34 , pp. 270-272
    • Yang, M.J.1    Moore, W.J.2    Bennett, B.R.3    Shanabrook, B.V.4
  • 12
    • 0030142623 scopus 로고    scopus 로고
    • 175 K CW operation of InAsSb/InAlAsSb quantum well diode lasers emitting at 3.5 μm
    • H. K. Choi, G. W. Turner, M. J. Manfra, and M. K. Connors, "175 K CW operation of InAsSb/InAlAsSb quantum well diode lasers emitting at 3.5 μm" Appl. Phys. Lett., vol. 68, pp. 2936-2938, 1996.
    • (1996) Appl. Phys. Lett. , vol.68 , pp. 2936-2938
    • Choi, H.K.1    Turner, G.W.2    Manfra, M.J.3    Connors, M.K.4
  • 13
    • 0031258797 scopus 로고    scopus 로고
    • The growth of InAsSb/InAsP strained-layer superlattices for use in IR emitters
    • R. M. Biefeld, A. A. Allerman, S. R. Kurtz, and J. H. Burkhart, "The growth of InAsSb/InAsP strained-layer superlattices for use in IR emitters," J. Electron. Mater., vol. 26, pp. 1225-1230, 1997.
    • (1997) J. Electron. Mater. , vol.26 , pp. 1225-1230
    • Biefeld, R.M.1    Allerman, A.A.2    Kurtz, S.R.3    Burkhart, J.H.4
  • 14
    • 0033089501 scopus 로고    scopus 로고
    • High power asymmetrical InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3.4 μm
    • D. Wu, B. Lane, H. Mohseni, J. Diaz, and M. Razeghi, "High power asymmetrical InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3.4 μm," Appl. Phys. Lett., vol. 74, pp. 1194-1196, 1999.
    • (1999) Appl. Phys. Lett. , vol.74 , pp. 1194-1196
    • Wu, D.1    Lane, B.2    Mohseni, H.3    Diaz, J.4    Razeghi, M.5
  • 17
    • 0023104817 scopus 로고
    • On the performance of selenium rich lead-salt heterostructure lasers with remote p-n junction
    • R. Rosman, A. Katzir, P. Norton, K.-H. Bachem, and H. M. Preier, "On the performance of selenium rich lead-salt heterostructure lasers with remote p-n junction," IEEE J. Quantum Electron., vol. 23, pp. 94-102, 1987.
    • (1987) IEEE J. Quantum Electron. , vol.23 , pp. 94-102
    • Rosman, R.1    Katzir, A.2    Norton, P.3    Bachem, K.-H.4    Preier, H.M.5
  • 18
    • 0000541549 scopus 로고    scopus 로고
    • Optically-pumped type-II interband terahertz lasers
    • submitted for publication
    • I. Vurgaftman and J. R. Meyer, "Optically-pumped type-II interband terahertz lasers," Appl. Phys. Lett., submitted for publication.
    • Appl. Phys. Lett.
    • Vurgaftman, I.1    Meyer, J.R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.