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Volumn 68, Issue 21, 1996, Pages 2936-2938
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175 K continuous wave operation of InAsSb/InAlAsSb quantum-well diode lasers emitting at 3.5 μm
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CONTINUOUS WAVE LASERS;
CURRENT DENSITY;
FABRICATION;
LIGHT EMISSION;
MOLECULAR BEAM EPITAXY;
QUANTUM EFFICIENCY;
REACTIVE ION ETCHING;
SEMICONDUCTING INDIUM COMPOUNDS;
TEMPERATURE MEASUREMENT;
THERMAL EFFECTS;
BROAD STRIPE LASERS;
CONTINUOUS WAVE OPERATION;
INDIUM ALUMINUM ARSENIC ANTIMONIDE;
INDIUM ARSENIC ANTIMONIDE;
INDIUM ARSENIDE;
LASER WAVELENGTHS;
RIDGE WAVEGUIDE LASERS;
QUANTUM WELL LASERS;
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EID: 0030142623
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.116360 Document Type: Article |
Times cited : (107)
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References (14)
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