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Volumn 68, Issue 21, 1996, Pages 2936-2938

175 K continuous wave operation of InAsSb/InAlAsSb quantum-well diode lasers emitting at 3.5 μm

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; FABRICATION; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM COMPOUNDS; TEMPERATURE MEASUREMENT; THERMAL EFFECTS;

EID: 0030142623     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116360     Document Type: Article
Times cited : (107)

References (14)
  • 1
    • 0026970937 scopus 로고    scopus 로고
    • -5 in gas at 1 atm and 300 K.
    • -5 in gas at 1 atm and 300 K.
  • 11
    • 0029211840 scopus 로고    scopus 로고
    • H. K. Choi and G. W. Turner, SPIE Proc. 2382, 236 (1995).
    • H. K. Choi and G. W. Turner, SPIE Proc. 2382, 236 (1995).
  • 13
    • 0021142114 scopus 로고    scopus 로고
    • K. Onabe, NEC Res. Dev. 72, 1 (1984).
    • K. Onabe, NEC Res. Dev. 72, 1 (1984).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.