-
5
-
-
0032163361
-
-
J. B. Boos, W. Kruppa, B. R. Bennett, D. Park, S. Kirchoefer, R. Bass, and H. B. Dietrich, IEEE Trans. Electron Devices 45, 1869 (1998); J. B. Boos, M. J. Yang, B. R. Bennett, D. Park, W. Kruppa, C. H. Yang, and R. Bass, Electron. Lett. 34, 1525 (1998).
-
(1998)
IEEE Trans. Electron Devices
, vol.45
, pp. 1869
-
-
Boos, J.B.1
Kruppa, W.2
Bennett, B.R.3
Park, D.4
Kirchoefer, S.5
Bass, R.6
Dietrich, H.B.7
-
6
-
-
0032116279
-
-
J. B. Boos, W. Kruppa, B. R. Bennett, D. Park, S. Kirchoefer, R. Bass, and H. B. Dietrich, IEEE Trans. Electron Devices 45, 1869 (1998); J. B. Boos, M. J. Yang, B. R. Bennett, D. Park, W. Kruppa, C. H. Yang, and R. Bass, Electron. Lett. 34, 1525 (1998).
-
(1998)
Electron. Lett.
, vol.34
, pp. 1525
-
-
Boos, J.B.1
Yang, M.J.2
Bennett, B.R.3
Park, D.4
Kruppa, W.5
Yang, C.H.6
Bass, R.7
-
7
-
-
0043183300
-
-
F. C. Wang, W. E. Zhang, C. H. Yang, M. J. Yang, B. R. Bennett, R. A. Wilson, and D. R. Stone, Appl. Phys. Lett. 70, 3005 (1997).
-
(1997)
Appl. Phys. Lett.
, vol.70
, pp. 3005
-
-
Wang, F.C.1
Zhang, W.E.2
Yang, C.H.3
Yang, M.J.4
Bennett, B.R.5
Wilson, R.A.6
Stone, D.R.7
-
9
-
-
0032484779
-
-
M. J. Yang, W. J. Moore, B. R. Bennett, and B. V. Shanabrook, Electron. Lett. 34, 270 (1998).
-
(1998)
Electron. Lett.
, vol.34
, pp. 270
-
-
Yang, M.J.1
Moore, W.J.2
Bennett, B.R.3
Shanabrook, B.V.4
-
10
-
-
0001113073
-
-
M. J. Yang, W. J. Moore, C. H. Yang, R. A. Wilson, B. R. Bennett, and B. V. Shanabrook, J. Appl. Phys. 85, 6632 (1999).
-
(1999)
J. Appl. Phys.
, vol.85
, pp. 6632
-
-
Yang, M.J.1
Moore, W.J.2
Yang, C.H.3
Wilson, R.A.4
Bennett, B.R.5
Shanabrook, B.V.6
-
11
-
-
0029638629
-
-
J. R. Meyer, C. A. Hoffman, F. J. Bartoli, and L. R. Ram-Mohan, Appl. Phys. Lett. 67, 757 (1995).
-
(1995)
Appl. Phys. Lett.
, vol.67
, pp. 757
-
-
Meyer, J.R.1
Hoffman, C.A.2
Bartoli, F.J.3
Ram-Mohan, L.R.4
-
13
-
-
85034120219
-
-
Santa Fe
-
R. H. Miles, D. H. Chow, T. C. Hasenberg, A. R. Kost, and Y.-H. Zhang, the 7th International Conference On Narrow Gap Semicond (Santa Fe, 1995), p. 31.
-
(1995)
7th International Conference on Narrow Gap Semicond
, pp. 31
-
-
Miles, R.H.1
Chow, D.H.2
Hasenberg, T.C.3
Kost, A.R.4
Zhang, Y.-H.5
-
15
-
-
0027239334
-
-
J. R. Waterman, B. V. Shanabrook, R. J. Wagner, M. J. Yang, J. L. Davis, and J. P. Omaggio, Semicond. Sci. Technol. 8, S106 (1993).
-
(1993)
Semicond. Sci. Technol.
, vol.8
-
-
Waterman, J.R.1
Shanabrook, B.V.2
Wagner, R.J.3
Yang, M.J.4
Davis, J.L.5
Omaggio, J.P.6
-
16
-
-
0002734686
-
-
edited by H. Ehrenreich and D. Turnbull Academic, Boston, and references therein. As a result, this value is adjusted to give the best fit to the 5 K PL data
-
There is no conclusive experimental or theoretical value for the InAs/InSb or GaSb/InSb band offsets. See, e.g., E. T. Yu, J. O. McCladin, and T. C. McGill, in Solid State Physics, edited by H. Ehrenreich and D. Turnbull (Academic, Boston, 1992), Vol. 46, p. 1, and references therein. As a result, this value is adjusted to give the best fit to the 5 K PL data.
-
(1992)
Solid State Physics
, vol.46
, pp. 1
-
-
Yu, E.T.1
McCladin, J.O.2
McGill, T.C.3
|