The growth of InAsSb/InAsP strained-layer superlattices for use in infrared emitters

Journal of Electronic Materials

Volumn 26, Issue 10, 1997, Pages 1225-1230

  Biefeld, R M ^a   Allerman, A A ^a   Kurtz, S R ^a   Burkhart, J H ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b IDAHO STATE UNIVERSITY   (United States)

Author keywords

InAsSb; Metalorganic chemical vapor deposition (MOCVD); Mid infrared lasers; Strained layer superlattices

Indexed keywords

COMPOSITION EFFECTS; HETEROJUNCTIONS; INJECTION LASERS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PUMPING; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

INFRARED EMITTERS;

SEMICONDUCTOR SUPERLATTICES;

EID: 0031258797     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0024-9     Document Type: Article

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