Mid-infrared in1-xAIxSMnSb heterostructure diode lasers

Applied Physics Letters

Volumn 70, Issue 8, 1997, Pages 931-933

  Ashley, T ^a   Elliott, C T ^a   Jefferies, R ^a   Johnson, A D ^a   Pryce, G J ^a   White, A M ^a   Carroll, M ^b  

^a DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

^b CARDIFF UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; QUANTUM EFFICIENCY; REFRACTIVE INDEX; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

INDIUM ALUMINUM ANTIMONIDE; INDIUM ANTIMONIDE; LASER POWER OUTPUT; STIMULATED EMISSION;

SEMICONDUCTOR LASERS;

EID: 0031078126     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118444     Document Type: Article

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