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Volumn 33, Issue 8, 1997, Pages 1403-1406

Recent advances in Sb-based midwave-infrared lasers

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; MOLECULAR BEAM EPITAXY; PULSED LASER APPLICATIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES;

EID: 0031212505     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.605563     Document Type: Article
Times cited : (76)

References (13)
  • 2
    • 0029516205 scopus 로고    scopus 로고
    • MWIR lasers employing GaInSb/InAs broken-gap superlattice active regions and superlattice cladding layers
    • San Francisco, CA.
    • T. C. Hasenberg, R. H. Miles, A. R. Kost, D. H. Chow, and L. West, "MWIR lasers employing GaInSb/InAs broken-gap superlattice active regions and superlattice cladding layers," in 1995 LEOS Annu. Meet., San Francisco, CA.
    • 1995 LEOS Annu. Meet.
    • Hasenberg, T.C.1    Miles, R.H.2    Kost, A.R.3    Chow, D.H.4    West, L.5
  • 3
    • 0028370957 scopus 로고
    • InAsSb/AlAsSb double-heterostructure diode lasers emitting at 4 μm
    • S. J. Eglash and H. K. Choi, "InAsSb/AlAsSb double-heterostructure diode lasers emitting at 4 μm," Appl. Phys. Lett., vol. 64, no. 7, pp. 833-835, 1994.
    • (1994) Appl. Phys. Lett. , vol.64 , Issue.7 , pp. 833-835
    • Eglash, S.J.1    Choi, H.K.2
  • 5
    • 0029253732 scopus 로고
    • Demonstration of 3.5 μm GaInSb/InAs superlattice laser diode
    • Feb.
    • T. C. Hasenberg, D. H. Chow, A. R. Kost, R. H. Miles, and L. West, "Demonstration of 3.5 μm GaInSb/InAs superlattice laser diode," Electron. Lett., vol. 31, pp. 275-276, Feb. 1995.
    • (1995) Electron. Lett. , vol.31 , pp. 275-276
    • Hasenberg, T.C.1    Chow, D.H.2    Kost, A.R.3    Miles, R.H.4    West, L.5
  • 8
    • 0029394401 scopus 로고
    • Theoretical performance limits of 2.1-4.1 μm InAs/InGaSb, HgCdTe, and InGaAsSb lasers
    • Oct.
    • M. E. Flatté, C. H. Grein, H. Ehrenreich, R. H. Miles, and H. Cruz, "Theoretical performance limits of 2.1-4.1 μm InAs/InGaSb, HgCdTe, and InGaAsSb lasers," J. Appl. Phys., vol. 78, pp. 4552-4559, Oct. 1995.
    • (1995) J. Appl. Phys. , vol.78 , pp. 4552-4559
    • Flatté, M.E.1    Grein, C.H.2    Ehrenreich, H.3    Miles, R.H.4    Cruz, H.5
  • 11
    • 0029342775 scopus 로고
    • InAsSb/InAlAsSb strained quantum well lasers emitting at 3.9 μm
    • July
    • H. K. Choi and G. W. Turner, "InAsSb/InAlAsSb strained quantum well lasers emitting at 3.9 μm," Appl. Phys. Lett., pp. 332-334, July 1995.
    • (1995) Appl. Phys. Lett. , pp. 332-334
    • Choi, H.K.1    Turner, G.W.2
  • 12
    • 0028371887 scopus 로고
    • Midwave (4 μm) infrared lasers and light emitting diodes with biaxially compressed InAsSb active regions
    • Feb.
    • S. R. Kurtz, R. M. Biefeld, L. R. Dawson, K. C. Baucom, and A. J. Howard, "Midwave (4 μm) infrared lasers and light emitting diodes with biaxially compressed InAsSb active regions," Appl. Phys. Lett., vol. 64, pp. 812-814, Feb. 1994.
    • (1994) Appl. Phys. Lett. , vol.64 , pp. 812-814
    • Kurtz, S.R.1    Biefeld, R.M.2    Dawson, L.R.3    Baucom, K.C.4    Howard, A.J.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.