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1
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3342944585
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Room temperature 2.78-μm AlGaAsSb/InGaAsSb quantum well lasers
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H. Lee, P. K. York, R. J. Menna, R. U. Martinelli, D. Z. Garbuzov, S. Y. Narayan, and J. C Connolly, "Room temperature 2.78-μm AlGaAsSb/InGaAsSb quantum well lasers," in IEEE Int. Laser Conf. Dig., 1994, vol. 14, pp. PD15-PD16.
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Lee, H.1
York, P.K.2
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Martinelli, R.U.4
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Connolly, J.C.7
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2
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0029516205
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MWIR lasers employing GaInSb/InAs broken-gap superlattice active regions and superlattice cladding layers
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San Francisco, CA.
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T. C. Hasenberg, R. H. Miles, A. R. Kost, D. H. Chow, and L. West, "MWIR lasers employing GaInSb/InAs broken-gap superlattice active regions and superlattice cladding layers," in 1995 LEOS Annu. Meet., San Francisco, CA.
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1995 LEOS Annu. Meet.
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Hasenberg, T.C.1
Miles, R.H.2
Kost, A.R.3
Chow, D.H.4
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3
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0028370957
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InAsSb/AlAsSb double-heterostructure diode lasers emitting at 4 μm
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S. J. Eglash and H. K. Choi, "InAsSb/AlAsSb double-heterostructure diode lasers emitting at 4 μm," Appl. Phys. Lett., vol. 64, no. 7, pp. 833-835, 1994.
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Eglash, S.J.1
Choi, H.K.2
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4
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3342953226
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2 μm GaSb-based distributed Bragg reflector lasers
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postdeadline
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P. K. York, R. J. Menna, D. Garbuzov, H. Lee, R. U. Martinelli, and S. Y. Narayan, "2 μm GaSb-based distributed Bragg reflector lasers," in CLEO, 1995, postdeadline.
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CLEO
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York, P.K.1
Menna, R.J.2
Garbuzov, D.3
Lee, H.4
Martinelli, R.U.5
Narayan, S.Y.6
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5
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0029253732
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Demonstration of 3.5 μm GaInSb/InAs superlattice laser diode
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Feb.
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T. C. Hasenberg, D. H. Chow, A. R. Kost, R. H. Miles, and L. West, "Demonstration of 3.5 μm GaInSb/InAs superlattice laser diode," Electron. Lett., vol. 31, pp. 275-276, Feb. 1995.
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6
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3342925495
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3-4 μm laser diodes based on GaInSb/InAs superlattices
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Jan
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R. H. Miles, D. H. Chow, T. C. Hasenberg, A. R. Kost, and Y.-H. Zhang, "3-4 μm laser diodes based on GaInSb/InAs superlattices," in Proc. 7th Int. Conf. on Narrow Gap Semiconductors, Jan 1995.
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Miles, R.H.1
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Hasenberg, T.C.3
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Zhang, Y.-H.5
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7
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0029483778
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Midwave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices
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Dec.
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D. H. Chow, R. H. Miles, T. C. Hasenberg, A. R. Kost, Y.-H. Zhang, H. L. Dunlap, and L. West, "Midwave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices," Appl. Phys. Lett., vol. 67, pp. 3700-3702, Dec. 1995.
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Zhang, Y.-H.5
Dunlap, H.L.6
West, L.7
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8
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0029394401
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Theoretical performance limits of 2.1-4.1 μm InAs/InGaSb, HgCdTe, and InGaAsSb lasers
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Oct.
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M. E. Flatté, C. H. Grein, H. Ehrenreich, R. H. Miles, and H. Cruz, "Theoretical performance limits of 2.1-4.1 μm InAs/InGaSb, HgCdTe, and InGaAsSb lasers," J. Appl. Phys., vol. 78, pp. 4552-4559, Oct. 1995.
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Flatté, M.E.1
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Miles, R.H.4
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11
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0029342775
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InAsSb/InAlAsSb strained quantum well lasers emitting at 3.9 μm
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July
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H. K. Choi and G. W. Turner, "InAsSb/InAlAsSb strained quantum well lasers emitting at 3.9 μm," Appl. Phys. Lett., pp. 332-334, July 1995.
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Choi, H.K.1
Turner, G.W.2
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12
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0028371887
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Midwave (4 μm) infrared lasers and light emitting diodes with biaxially compressed InAsSb active regions
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Feb.
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S. R. Kurtz, R. M. Biefeld, L. R. Dawson, K. C. Baucom, and A. J. Howard, "Midwave (4 μm) infrared lasers and light emitting diodes with biaxially compressed InAsSb active regions," Appl. Phys. Lett., vol. 64, pp. 812-814, Feb. 1994.
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Kurtz, S.R.1
Biefeld, R.M.2
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Baucom, K.C.4
Howard, A.J.5
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13
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0028769182
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2.7-3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers
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May
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A. N. Baranov, A. N. Imenkov, V. V. Sherstnev, and Y. P. Yakovlev, 2.7-3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers," Appl. Phys. Lett., vol. 64, pp. 2480-2482, May 1994.
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Baranov, A.N.1
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