Epitaxial growth of β-SIC thin films using bis-trimethylsilylmethane on Si(100) with a polycrystalline buffer layer

Thin Solid Films

Volumn 290-291, Issue , 1996, Pages 181-185

  Bahng, Wook ^a   Kim, Hyeong Joon ^a  

^a Seoul National University   (South Korea)

Author keywords

Bis trimethylsilylmethane; Buffer; Heteroepitaxial SiC thin film

Indexed keywords

CARBURIZING; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; HIGH TEMPERATURE OPERATIONS; POLYCRYSTALLINE MATERIALS; SILICON CARBIDE; SINGLE CRYSTALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

BISTRIMETHYLSILYLMETHANE (BTMSM); BUFFER LAYERS;

THIN FILMS;

EID: 0030397795     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09193-6     Document Type: Article

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