Microstructural evolution and defect formation during the initial stages of the growth of silicon carbide and aluminum nitride on α(6H) -SiC(0001) substrates

Journal of Crystal Growth

Volumn 163, Issue 1-2, 1996, Pages 93-99

  Davis, Robert F ^a   Tanaka, Satoru ^a,b   Kern, R Scott ^a  

^a North Carolina State University   (United States)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COALESCENCE; COMPOSITION EFFECTS; CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; DEPOSITION; GRAIN BOUNDARIES; MOLECULAR BEAM EPITAXY; MONOLAYERS; NUCLEATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; THIN FILMS;

ALUMINUM NITRIDE; DOUBLE POSITIONING BOUNDARIES; GAS FLOW RATIOS; GAS SOURCE MOLECULAR BEAM EPITAXY; MICROSTRUCTURAL EVOLUTION; STEP BUNCHING; STEP FLOW;

FILM GROWTH;

EID: 0030563282     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)01052-1     Document Type: Article

References (26)

1. V. Heine, C. Cheng and R.J. Needs, J. Am. Ceram. Soc. 74 (1991) 2630.
2. R. Kaplan, Surf. Sci. 215 (1989) 111.
3. S. Yoshida, S. Misawa and S. Gonda, J. Vac. Sci. Technol. B 1 (1983) 250.
4. H. Amano, N. Sawaki, I. Akasaki and Y. Toyoda, Appl. Phys. Lett. 48 (1986) 353.
5. M.E. Lin, S. Strite, A. Agarwal, A. Salvador, G.L. Zhou, N. Teraguchi, A. Rockett and H. Morkoc, Appl. Phys. Lett. 62 (1993) 702.
6. Z. Sitar, M.J. Paisley, B. Yan, J. Ruan, W.J. Choyke and R.F. Davis, J. Vac. Sci. Technol. B 8 (1990) 316.
7. G.A. Slack and S.F. Bartram, J. Appl. Phys. 46 (1975) 89.
8. A. Taylor and R.M. Jones, in: Silicon Carbide, A High Temperature Semiconductor, Eds. J.R. O'Conor and J. Smittens (Pergamon, New York, 1960) pp. 147-154.
9. H.P. Maruska and J.J. Tietjien, Appl. Phys. Lett. 15 (1969) 327.
10. A. Seifert, A. Berger and W. Muller, J. Am. Ceram. Soc. 75 (1992) 873.
11. S. Hagege, Y. Ishida and S. Tanaka, J. Phys. 45 (1988) 189.
12. M.F. Denanot and J. Rabier, J. Mater. Sci. 24 (1989) 1594.
13. A.D. Westwood and M.R. Notis, Mater. Res. Soc. Symp. Proc. 167 (1989) 295.
14. A.D. Westwood and M.R. Notis, J. Am. Ceram. Soc. 74 (1991) 1226.
15. M.R. McCartney, R.A. Youngman and R.G. Teller, Ultramicroscopy 40 (1992) 291.
16. J.H. Harris, R.A. Youngman and R.G. Teller, J. Mater. Res. 5 (1990) 1763.
17. T.L. Chu, D.W. Ing and A.J. Noreika, Solid State Electron. 10 (1967) 1023.
18. M. Morita, S. Isogai, N. Shimizu, K. Tsubouchi and N. Mikoshiba, Jpn. J. Appl. Phys. 20 (1981) L173.
19. S. Yoshida, S. Misawa, Y. Fujii, S. Takada, H. Hayakawa, S. Gonda and A. Itoh, J. Vac. Sci. Technol. 16 (1979) 990.
20. Z. Sitar, M.J. Paisley, B. Yan, R.F. Davis, J. Ruan and W.J. Choyke, Thin Solid Films 200 (1991) 311.
21. W.J. Meng, J. Heremans and Y.T. Cheng, Appl. Phys. Lett. 59 (1991) 2097.
22. L.B. Rowland, R.S. Kern, S. Tanaka and R.F. Davis, J. Mater. Res. 8 (1993) 2310.
23. S. Tanaka, R.S. Kern and R.F. Davis, Appl. Phys. Lett. 65 (1994) 2851.
24. D.R. Hamann, Phys. Rev. Lett. 60 (1988) 313.
25. R. Ghez and S.S. Iyer, IBM J. Res. Dev. 32 (1988) 804.
26. S. Tanaka, R.S. Kern, J. Bentley and R.F. Davis, to be published.