New susceptor arrangement for the epitaxial growth of β-SiC on silicon

Journal of Crystal Growth

Volumn 158, Issue 4, 1996, Pages 491-496

  Von Münch, Waldemar ^a   Ruhnau, Ulrich ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; METHANE; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SILANES; SILICON CARBIDE; SINGLE CRYSTALS; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

BLACK BODY RADIATION; CARRIER GAS; CONICAL CAVITY; GRAPHITE SUSCEPTOR; SILANE METHANE RATIO; SUSCEPTOR ARRANGEMENT;

EPITAXIAL GROWTH;

EID: 0030084575     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00458-0     Document Type: Article

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