Novel statistical fluctuation of dopant concentration and its influence on scaled MOS device performance

International Workshop on Statistical Metrology, Proceedings, IWSM

Volumn , Issue , 1997, Pages 16-19

  Mizuno, Tomohisa ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; STATISTICS; SUBSTRATES; SURFACES;

DOPANT CONCENTRATION; STANDARD DEVIATION; STATISTICAL FLUCTUATION; SYSTEMATIC DOPANT FLUCTUATION;

MOSFET DEVICES;

EID: 0030699827     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)