Transmission electron microscopy investigation of SiC films grown on SiC substrates by solid-source molecular beam epitaxy

Journal of Materials Research

Volumn 14, Issue 8, 1999, Pages 3226-3236

  Kaiser, U ^a   Khodos, I ^b   Brown, P D ^c   Chuvilin, A ^d   Albrecht, M ^e   Humphreys, C J ^c   Fissel, A ^a   Richter, W ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^d BORESKOV INSTITUTE OF CATALYSIS   (Russian Federation)

^e UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL MICROSTRUCTURE; FILM GROWTH; HIGH TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

SOLID-SOURCE MOLECULAR BEAM EPITAXY;

SEMICONDUCTING FILMS;

EID: 0032671809     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.1999.0436     Document Type: Article

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