Observation of 3-fold periodicity in 3C-SiC layers grown by MBE

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 259-262

  Kaiser, U ^a   Brown, P D ^b   Chuvilin, A ^c   Khodos, I ^d   Fissel, A ^a   Richter, W ^a   Preston, A ^b   Humphreys, C J ^b  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c BORESKOV INSTITUTE OF CATALYSIS   (Russian Federation)

^d INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

Author keywords

Homoepitaxy; Molecular Beam Epitaxy; RHEED

Indexed keywords

CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; STACKING FAULTS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; TWINNING;

FOLD PERIODICITY; HOMOEPITAXY;

SILICON CARBIDE;

EID: 3743141700     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

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