An asymmetric memory cell using a c-tft for single-bit-line sram's

IEEE Transactions on Electron Devices

Volumn 46, Issue 5, 1999, Pages 927-932

  Kuriyama, Hirotada ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

(SNM); Asymmetric memory cell (amc); Cell ratio; Complementary tft (c tft); Low power; Low voltage; N channel tft; P channel tft; Single bit line; SRAM; Static noise margin

Indexed keywords

GATES (TRANSISTOR); THIN FILM TRANSISTORS;

ASYMMETRIC MEMORY CELL (AMC); STATIC RANDOM ACCESS MEMORY (SRAM);

RANDOM ACCESS STORAGE;

EID: 0032664319     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.760399     Document Type: Article

References (13)

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