Non-volatile MOSFET memory device based on mobile protons in SiO2 thin films

Journal of Non-Crystalline Solids

Volumn 254, Issue 1-3, 1999, Pages 1-10

  Vanheusden, K ^a,b   Warren, W L ^b   Devine, R A B ^c   Fleetwood, D M ^b   Draper, B L ^b   Schwank, J R ^b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIELECTRIC FILMS; ELECTRIC FIELD EFFECTS; ELECTRIC SPACE CHARGE; GATES (TRANSISTOR); HYDROGEN; MOSFET DEVICES; NONVOLATILE STORAGE; POSITIVE IONS; SILICA; SILICON WAFERS; THIN FILMS;

MOSFET MEMORY DEVICES;

SEMICONDUCTOR STORAGE;

EID: 0032660611     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(99)00366-X     Document Type: Article

References (23)

1. S.M. Sze, in: Physics of Semiconductor Devices, ch. 8, Wiley, New York, 1981.
2. K.L. Brower, Phys. Rev. B 42 (1990) 3444.
3. Deal, M. Sklar, A.S. Grove, E.H. Snow, J. Electrochem. Soc. 114 (1967) 266.
4. Warren, K. Vanheusden, J.R. Schwank, D.M. Fleetwood, P.S. Winokur, R.A.B. Devine, Appl. Phys. Lett. 68 (1996) 2993.
5. K. Vanheusden, W.L. Warren, R.A.B. Devine, D.M. Fleetwood, J.R. Schwank, M.R. Shaneyfelt, P.S. Winokur, Z.J. Lemnios, Nature 386 (1997) 587.
6. K. Vanheusden, W.L. Warren, R.A.B. Devine, J.R. Schwank, D.M. Fleetwood, R.G. Polcawich, S.P. Karna, R.D. Pugh, IEEE Trans. Nucl. Sci. 44 (1997) 2087.
7. R.K. Lawrence, H.L. Hughes, R.E. Stahlbush, D.I. Ma, M.E. Twigg, in: Proceedings of the IEEE International SOI Conference IEEE Catalog No. 97CH36069, Piscataway, NJ, 1997, p. 142.
8. N. Lifshitz, G. Smolinsky, Appl. Phys. Lett. 55 (1989) 408.
9. P.S. Winokur, H.E. Boesch, J.M. McGarrity, F.B. McLean, IEEE Trans. Nucl. Sci. 24 (1977) 2113.
10. A.J. Auberton-Herve, T. Barge, F. Metral, M. Bruel, B. Aspar, C. Maleville, H. Moriceau, T. Poumeyrol, in: W.L. Warren, R.A.B. Devine, M. Matsumura, S. Cristoloveanu, Y. Homma, J. Kanicki (Eds.), Amorphous and Crystalline Insulating Thin Films, vol. 446, Materials Research Society, Pittsburgh, PA, 1997, p. 177.
11. B.L. Sharma, in: Diffusion in Semiconductors, TransTech, Aedermannsdorf, 1970, p. 87.
12. S. Cristoloveanu and S.S. Li, in: Electrical Characterization of SOI Materials and Devices, Kluwer Academic, Boston, MA, 1995, p. 104.
13. D.M. Fleetwood, J.H. Scofield, Phys. Rev. Lett. 64 (1990) 579.
14. S.R. Hofstein, IEEE Trans. Elect. Dev. 14 (1967) 749.
15. F.B. McLean, IEEE Trans. Nucl. Sci. 27 (1980) 1651.
16. N.S. Saks, R.W. Rendell, IEEE Trans. Nucl. Sci. 39 (1992) 2220.
17. A.M. Ferreira, S.P. Karna, C.P. Brothers, R.D. Pugh, B.K. Singaraju, K. Vanheusden, W.L. Warren, R.A.B. Devine, in: W.L. Warren, R.A.B. Devine, M. Matsumura, S. Cristoloveanu, Y. Homma, J. Kanicki (Eds.), Amorphous and Crystalline Insulating Thin Films, vol. 446, Materials Research Society, Pittsburgh, PA, 1997, p. 247.
18. S.P. Karna, R.D. Pugh, C.P. Brothers, W. Shedd, B.K. Singaraju, in: Proceedings of the 1997 IEEE International SOI Conference, IEEE Catalog No. 97CH36069, Piscataway, NJ, 1997, p. 32.
19. K. Vanheusden, W.L. Warren, D.M. Fleetwood, J.R. Schwank, M.R. Shaneyfelt, B.L. Draper, P.S. Winokur, R.A.B. Devine, L.B. Archer, G.A. Brown, R.M. Wallace, Appl. Phys. Lett. 73 (1998) 674.
20. S.M. Myers, G.A. Brown, A.G. Revesz, H.L. Hughes, J. Appl. Phys. 73 (1993) 2196.
21. D.L. Griscom, J. Appl. Phys. 58 (1985) 2524.
22. K. Vanheusden, S.P. Karna, R.D. Pugh, W.L. Warren, D.M. Fleetwood, R.A.B. Devine, A.H. Edwards, Appl. Phys. Lett. 72 (1998) 28.
23. D.M. Fleetwood, W.L. Warren,. K. Vanheusden, R.A.B. Devine, M.R. Shaneyfelt, B.L. Draper, J.R. Schwank, T.L. Meisenheimer, P.S. Winokur, M.G. Knoll, in: Proceedings of the 1998 IEEE International Non-volatile Memory Technology Conference, IEEE Catalog No. 98EX141, Piscataway, NJ, 1998, p. 91.