BOX quality as measured by hydrogen-anneal-induced positive charge transport

IEEE International SOI Conference

Volumn , Issue , 1997, Pages 142-143

  Lawrence, R K ^a   Hughes, H L ^a   Stahlbush, R E ^a   Ma, D I ^a   Twigg, M E ^a  

^a Advanced Research & Applications Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CHARGE; HYDROGEN; HYSTERESIS; SEMICONDUCTOR DEVICE STRUCTURES;

BURIED OXIDES; POSITIVE CHARGE TRANSPORT; SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX);

SILICON ON INSULATOR TECHNOLOGY;

EID: 0031337197     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)