Nonvolatile memory based on mobile protons

Biennial IEEE International Nonvolatile Memory Technology Conference

Volumn , Issue , 1998, Pages 91-94

  Fleetwood, D M ^a   Warren, W L ^a   Vanheusden, K ^a   Devine, R A B ^a   Shaneyfelt, M R ^a   Draper, B L ^a   Schwank, J R ^a   Meisenheimer, T L ^a   Winokur, P S ^a   Knoll, M G ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; MOSFET DEVICES; OXIDES; PROTONS; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE STRUCTURES;

GATE BIAS; MOBILE PROTONS; OXIDE LAYERS; OXIDE THICKNESS;

NONVOLATILE STORAGE;

EID: 0032226490     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (21)