In situ reflectance difference spectroscopy: Nitrogen-plasma doping of MBE grown ZnTe layers

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 132-136

  Stifter, D ^a   Bonanni, A ^b   Garcia Rocha, M ^b   Schmid, M ^a   Hingerl, K ^a   Sitter, H ^b  

^a PROFACTOR GMBH   (Austria)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL ORIENTATION; ELECTRON CYCLOTRON RESONANCE; FERMI LEVEL; MOLECULAR BEAM EPITAXY; NITROGEN; PLASMA SOURCES; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS; THIN FILMS;

REFLECTANCE DIFFERENCE SPECTROSCOPY; ZINC TELLURIDE;

SEMICONDUCTING FILMS;

EID: 0032650982     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01307-4     Document Type: Article

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