Non-destructive measurement of electron concentration in n-ZnSe by means of reflectance difference spectroscopy

Journal of Crystal Growth

Volumn 184-185, Issue , 1998, Pages 505-509

  Kumagai, N ^a   Jung, H D ^a   Hanada, T ^a   Zhu, Z ^a   Yasuda, T ^b   Kimura, K ^c   Lee, S D ^d   Jeon, M H ^d   Park, H S ^d   Kim, T I ^d   Yao, T ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b NATL INST FOR ADV INTERDISC RES   (Japan)

^c JRCAR ATP   (Japan)

^d Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Doping; Electro optic effect; Molecular beam epitaxy, linear; n ZnSe; Reflectance difference spectroscopy

Indexed keywords

EID: 4244113491     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0022-0248(98)80105-x     Document Type: Article

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