-
1
-
-
0002639920
-
Precision comparison of the lattice parameters of silicon monocrystals
-
Kessler E G et al 1994 Precision comparison of the lattice parameters of silicon monocrystals J. Res. Natl Inst. Stand. Technol. 99 1-18
-
(1994)
J. Res. Natl Inst. Stand. Technol.
, vol.99
, pp. 1-18
-
-
Kessler, E.G.1
-
2
-
-
0024064049
-
Lattice distortions induced by carbon in silicon
-
Windisch D and Becker P 1988 Lattice distortions induced by carbon in silicon Phil. Mag. 58 435-43
-
(1988)
Phil. Mag.
, vol.58
, pp. 435-443
-
-
Windisch, D.1
Becker, P.2
-
4
-
-
0345338449
-
Silicon lattice comparisons related to the Avogadro project: Uniformity of new material and surface preparation effects
-
Kessler E G Jr, Owens S, Henins A and Deslattes R 1999 Silicon lattice comparisons related to the Avogadro project: uniformity of new material and surface preparation effects IEEE Trans. Instrum. Meas. 48 551-5
-
(1999)
IEEE Trans. Instrum. Meas.
, vol.48
, pp. 551-555
-
-
Kessler E.G., Jr.1
Owens, S.2
Henins, A.3
Deslattes, R.4
-
5
-
-
34250139322
-
Determination of silicon unit cell parameters by precision measurements of Bragg plane spacings
-
Siegert H, Becker P and Seyfried P 1984 Determination of silicon unit cell parameters by precision measurements of Bragg plane spacings Z. Phys. B 56 273-8
-
(1984)
Z. Phys. B
, vol.56
, pp. 273-278
-
-
Siegert, H.1
Becker, P.2
Seyfried, P.3
-
6
-
-
0345338447
-
How perfect is a perfect crystal? Part-per billion level mosaicity measurements in silicon
-
Deutsch M, Hart M and Cummings S 1987 How perfect is a perfect crystal? Part-per billion level mosaicity measurements in silicon Appl. Phys. Lett. 51 1410-12
-
(1987)
Appl. Phys. Lett.
, vol.51
, pp. 1410-1412
-
-
Deutsch, M.1
Hart, M.2
Cummings, S.3
-
7
-
-
33750673524
-
Fundamental physics using ultrahigh resolution gamma spectroscopy
-
Dewey M S, Kessler E G Jr, Greene G L, Deslattes R D, Borner H and Jolie J 1989 Fundamental physics using ultrahigh resolution gamma spectroscopy Nucl. Instrum. Meth. Phys. Res. A 284 151-5
-
(1989)
Nucl. Instrum. Meth. Phys. Res. A
, vol.284
, pp. 151-155
-
-
Dewey, M.S.1
Kessler E.G., Jr.2
Greene, G.L.3
Deslattes, R.D.4
Borner, H.5
Jolie, J.6
-
8
-
-
0344475756
-
Monitoring the kilogram by electromagnetic means
-
at press
-
Kibble B 1999 Monitoring the kilogram by electromagnetic means IEEE Trans. Instrum. Meas. 48 (2) at press
-
(1999)
IEEE Trans. Instrum. Meas.
, vol.48
, Issue.2
-
-
Kibble, B.1
-
10
-
-
0001888195
-
The Si-28 lattice parameter
-
Becker P et al 1995 The Si-28 lattice parameter PTB-Mittelungen 105 95-8
-
(1995)
PTB-mittelungen
, vol.105
, pp. 95-98
-
-
Becker, P.1
-
11
-
-
0031118913
-
International intercomparisons of silicon density standards
-
Bettin H et al 1997 International intercomparisons of silicon density standards IEEE Trans. Instrum. Meas. 46 556-9
-
(1997)
IEEE Trans. Instrum. Meas.
, vol.46
, pp. 556-559
-
-
Bettin, H.1
-
13
-
-
0344475755
-
The molar volume of silicon: Discrepancies and limitations
-
at press
-
Deslattes R D and Kessler E G Jr 1999 The molar volume of silicon: discrepancies and limitations IEEE Trans. Istrum. Meas. 48 (2) at press
-
(1999)
IEEE Trans. Istrum. Meas.
, vol.48
, Issue.2
-
-
Deslattes, R.D.1
Kessler E.G., Jr.2
-
14
-
-
0000102439
-
About the existing discrepancy in the determinations of the Avogadro constant
-
at press
-
Martin J et al 1999 About the existing discrepancy in the determinations of the Avogadro constant IEEE Trans. Instrum. Meas. 48 (2) at press
-
(1999)
IEEE Trans. Instrum. Meas.
, vol.48
, Issue.2
-
-
Martin, J.1
-
15
-
-
27844605695
-
New methods for determining the vacancy and void content of single crystal silicon
-
at press
-
Spaepen F 1999 New methods for determining the vacancy and void content of single crystal silicon IEEE Trans. Instrum. Meas. 48 (2) at press
-
(1999)
IEEE Trans. Instrum. Meas.
, vol.48
, Issue.2
-
-
Spaepen, F.1
-
16
-
-
0001322815
-
Interaction of copper with cavities in silicon
-
Meyers S M and Follstaedt D M 1996 Interaction of copper with cavities in silicon J. Appl. Phys. 79 1337-50
-
(1996)
J. Appl. Phys.
, vol.79
, pp. 1337-1350
-
-
Meyers, S.M.1
Follstaedt, D.M.2
-
17
-
-
0031244747
-
Measurement, modelling and simulation of defects in as-grown Czochralski silicon
-
Vanhellemont J 1997 Measurement, modelling and simulation of defects in as-grown Czochralski silicon J. Crystal Growth 180
-
(1997)
J. Crystal Growth
, vol.180
-
-
Vanhellemont, J.1
-
18
-
-
0000289478
-
Intrinsic point defects and reactions in the growth of large silicon crystals
-
Falster R et al 1998 Intrinsic point defects and reactions in the growth of large silicon crystals Electrochem. Soc. Proc. 98-1 468-89
-
(1998)
Electrochem. Soc. Proc.
, vol.98
, Issue.1
, pp. 468-489
-
-
Falster, R.1
|