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Volumn 32, Issue 10 A, 1999, Pages

Just how perfect can a perfect crystal be?

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL IMPURITIES; LATTICE CONSTANTS; MATHEMATICAL MODELS; SPECTROSCOPY; X RAY CRYSTALLOGRAPHY;

EID: 0032644232     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/32/10A/301     Document Type: Article
Times cited : (13)

References (18)
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    • Kessler, E.G.1
  • 2
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    • Lattice distortions induced by carbon in silicon
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    • Windisch, D.1    Becker, P.2
  • 4
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    • Silicon lattice comparisons related to the Avogadro project: Uniformity of new material and surface preparation effects
    • Kessler E G Jr, Owens S, Henins A and Deslattes R 1999 Silicon lattice comparisons related to the Avogadro project: uniformity of new material and surface preparation effects IEEE Trans. Instrum. Meas. 48 551-5
    • (1999) IEEE Trans. Instrum. Meas. , vol.48 , pp. 551-555
    • Kessler E.G., Jr.1    Owens, S.2    Henins, A.3    Deslattes, R.4
  • 5
    • 34250139322 scopus 로고
    • Determination of silicon unit cell parameters by precision measurements of Bragg plane spacings
    • Siegert H, Becker P and Seyfried P 1984 Determination of silicon unit cell parameters by precision measurements of Bragg plane spacings Z. Phys. B 56 273-8
    • (1984) Z. Phys. B , vol.56 , pp. 273-278
    • Siegert, H.1    Becker, P.2    Seyfried, P.3
  • 6
    • 0345338447 scopus 로고
    • How perfect is a perfect crystal? Part-per billion level mosaicity measurements in silicon
    • Deutsch M, Hart M and Cummings S 1987 How perfect is a perfect crystal? Part-per billion level mosaicity measurements in silicon Appl. Phys. Lett. 51 1410-12
    • (1987) Appl. Phys. Lett. , vol.51 , pp. 1410-1412
    • Deutsch, M.1    Hart, M.2    Cummings, S.3
  • 8
    • 0344475756 scopus 로고    scopus 로고
    • Monitoring the kilogram by electromagnetic means
    • at press
    • Kibble B 1999 Monitoring the kilogram by electromagnetic means IEEE Trans. Instrum. Meas. 48 (2) at press
    • (1999) IEEE Trans. Instrum. Meas. , vol.48 , Issue.2
    • Kibble, B.1
  • 10
    • 0001888195 scopus 로고
    • The Si-28 lattice parameter
    • Becker P et al 1995 The Si-28 lattice parameter PTB-Mittelungen 105 95-8
    • (1995) PTB-mittelungen , vol.105 , pp. 95-98
    • Becker, P.1
  • 11
    • 0031118913 scopus 로고    scopus 로고
    • International intercomparisons of silicon density standards
    • Bettin H et al 1997 International intercomparisons of silicon density standards IEEE Trans. Instrum. Meas. 46 556-9
    • (1997) IEEE Trans. Instrum. Meas. , vol.46 , pp. 556-559
    • Bettin, H.1
  • 13
    • 0344475755 scopus 로고    scopus 로고
    • The molar volume of silicon: Discrepancies and limitations
    • at press
    • Deslattes R D and Kessler E G Jr 1999 The molar volume of silicon: discrepancies and limitations IEEE Trans. Istrum. Meas. 48 (2) at press
    • (1999) IEEE Trans. Istrum. Meas. , vol.48 , Issue.2
    • Deslattes, R.D.1    Kessler E.G., Jr.2
  • 14
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    • About the existing discrepancy in the determinations of the Avogadro constant
    • at press
    • Martin J et al 1999 About the existing discrepancy in the determinations of the Avogadro constant IEEE Trans. Instrum. Meas. 48 (2) at press
    • (1999) IEEE Trans. Instrum. Meas. , vol.48 , Issue.2
    • Martin, J.1
  • 15
    • 27844605695 scopus 로고    scopus 로고
    • New methods for determining the vacancy and void content of single crystal silicon
    • at press
    • Spaepen F 1999 New methods for determining the vacancy and void content of single crystal silicon IEEE Trans. Instrum. Meas. 48 (2) at press
    • (1999) IEEE Trans. Instrum. Meas. , vol.48 , Issue.2
    • Spaepen, F.1
  • 16
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    • Interaction of copper with cavities in silicon
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  • 17
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    • Measurement, modelling and simulation of defects in as-grown Czochralski silicon
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  • 18
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    • Intrinsic point defects and reactions in the growth of large silicon crystals
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.