The molar volume of silicon: Discrepancies and limitations

IEEE Transactions on Instrumentation and Measurement

Volumn 48, Issue 2, 1999, Pages 238-241

  Deslattes, Richard D ^a   Kessler Jr , Ernest G ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Avogadro's number; Silicon kilogram; X ray diffraction; X ray topography

Indexed keywords

EID: 0344475755     PISSN: 00189456     EISSN: None     Source Type: Journal    
DOI: 10.1109/19.769572     Document Type: Article

References (16)

1. P. De Bievre et al. "The molar volume of silicon," IEEE Trans. Instrum. Meas., vol. 46, pp. 592-595, Apr. 1997.
2. H. Bettin et al. "International intercomparison of silicon density standards," IEEE Trans. Instrum. Meas., vol. 46, pp. 556-559, Apr. 1997.
3. R. D. Deslattes et al. "Determination of the Avogadro constant," Phys. Rev. Lett., vol. 33, pp. 463-466, 1974,
4. and R. D. Deslattes et al. Phys. Rev. Lett. vol. 36, pp. 898-900, 1976.
5. I. L. Barnes et al. "Absolute isotopic abundance ratios and the atomic weight of a reference sample of silicon," J. Res. Nat. Bur. Stand., vol. 79A. pp. 727-735, 1975.
6. P. Becker, "The determination of the Avogadro constant - Not simply a metrological problem," this issue, pp. 225-229.
7. J. Martin et al. "About the existing discrepancy in the determinations of the Avogadro constant," this issue.
8. We are indebted to V. Nagy and R. T. Weber of Bruker for obtaining these results.
9. E. Iino et al. "Cavities owing to hydrogen in Si single crystals grown by continuously charging CZ method," Mater. Sci. Eng., vol. B36, pp. 146-149, 1996.
10. These results were obtained in collaboration with D. Black of the Ceramics Division, NIST.
11. The image analysis was carried out by Larry Hudson, NIST.
12. This material was produced for the international Avogadro project by Wacker Siltronics through the efforts of Werner Zulehner.
13. F. Spaepen, "New methods for determining the vacancy and void content of single crystal silicon," this issue, pp. 230-232.
14. J. Vanhellemont et al. "Measurement, modeling and simulation of defects in as-grown Czochralski silicon," J. Crystal Growth, vol. 180, pp. 353-362, 1997.
15. R. Falster et al. "Intrinsic point defects and reactions in the growth of large silicon crystals," in Electrochem. Soc. Proc., vol. 98-1, pp. 468-489, 1998.
16. E. Williams et al. "Accurate measurement of the Planck constant," Phys. Rev. Lett., vol. 81, pp. 2404-2407, 1998.