Silicon lattice comparisons related to the avogadro project: Uniformity of new material and surface preparation effects

IEEE Transactions on Instrumentation and Measurement

Volumn 48, Issue 2, 1999, Pages 221-224

  Kassler Jr , Ernest G ^a   Owens, Scott M ^a   Henins, Albert ^a   Deslattes, Richard D ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Avogadro constant; Crystal lattice comparison; Silicon; Surface preparation; X ray diffraction; X ray measurements

Indexed keywords

EID: 0345338449     PISSN: 00189456     EISSN: None     Source Type: Journal    
DOI: 10.1109/19.769568     Document Type: Article

References (3)

1. E.G. Kessler, Jr., A. Henins, R. D. Deslattes, L. Nielsen, and M. Arif, "Precision comparison of the lattice parameters of silicon monocrystals," J. Res. Nat. Inst. Stand. Technol., vol. 99, pp. 1-18, 1994.
2. E.G. Kessler Jr., J. E. Schweppe, and R. D. Deslattes, "Intercomparison of silicon samples from the Avogadro projects," IEEE Trans. Instrum. Meas., vol. 46, pp. 551-555, 1997.
3. J. Martin, U. Kuetgens, J. Stümpel, and P. Becker, private communication.