The incorporation of hydrogen into III-V nitrides during processing

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 845-849

  Pearton, S J ^a   Shul, R J ^b   Wilson, R G ^c   Ren, F ^d   Zavada, J M ^e   Abernathy, C R ^a   Vartuli, C B ^a   Lee, J W ^a   Mileham, J R ^a   Mackenzie, J D ^a  

^a UNIVERSITY OF FLORIDA   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c Hughes Aircraft Co   (United States)

^d LUCENT TECHNOLOGIES   (United States)

^e U S ARMY RESEARCH OFFICE   (United States)

Author keywords

Defects; Hydrogen; III V nitrides; Passivation; Shallow donors

Indexed keywords

EID: 0001345612     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666647     Document Type: Article

References (9)

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