Nanofabrication toward sub-10 nm and its application to novel nanodevices

Nanotechnology

Volumn 10, Issue 2, 1999, Pages 135-141

  Sone, J ^a   Fujita, J ^a   Ochiai, Y ^a   Manako, S ^a   Matsui, S ^a   Nomura, E ^a   Baba, T ^a   Kawaura, H ^a   Sakamoto, T ^a   Chen, C D ^a,b   Nakamura, Y ^a   Tsai, J S ^a  

^a NEC CORPORATION   (Japan)

^b INSTITUTE OF PHYSICS   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); MOSFET DEVICES; QUANTUM THEORY; SEMICONDUCTOR DEVICE MANUFACTURE;

ALL-METALLIC SINGLE ELECTRON MEMORY CELLS; SINGLE ELECTRON TRANSISTORS;

NANOTECHNOLOGY;

EID: 0032652856     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/10/2/306     Document Type: Article

References (25)

1. Fujita J, Ohnishi Y, Ochiai Y and Matsui S 1996 Appl. Phys. Lett. 68 1297
2. Fujita J, Ohnishi Y, Ochiai Y, Nomura E and Matsui S 1996 J. Vac. Sci. Technol. B 14 4272
3. Manako S, Fujita J, Tanigaki K, Ochiai Y and Nomura E 1998 Int. Microprocess and Nanotechnology Conference (Korea) Digest of Papers 16B-9-4
4. Bigler D M and Schmelzer E K 1990 Nature 344 524
5. Fujita J, Morinaga M, Kishimoto T, Yasuda M, Matsui S and Shimizu F 1996 Nature 380 691
6. Morinaga M, Yasuda M, Kishimoto T, Shimizu F, Fujita J and Matsui S 1996 Phys. Rev. Lett. 77 802
7. Kawaura H, Sakamoto T, Ochiai Y, Fujita J and Baba T 1997 Int. Conf. Solid State Devices and Materials (Hamamatsu, Japan) 572
8. Chen C D, Nakamura Y and Tsai J S 1997 Appl. Phys. Lett. 71 2038
9. Hansch T and Schawlow A 1975 Opt. Commun. 13 68
10. Phillips W D and Metcalf H J 1982 Phys. Rev. Lett. 48 596
11. Raab E L, Prentiss M, Cable A, Chu S and Pritchard D E 1987 Phys. Rev. Lett. 59 2631
12. Chu S and Weiman C 1989 J. Opt. Soc. B 6 2020 (special issue on laser cooling and trapping of atoms)
13. Keith D W, Shattenburg M L, Smith H I and Pritchard D E 1988 Phys. Rev. Lett. 61 1580
14. Camal O, Sigel M, Sleator T, Takuma H and Mlynek J 1991 Phys. Rev. Lett. 67 3231
15. Anderson M H, Ensher J R, Matthews M R, Wieman C E and Cornell E A 1995 Science 269 198
16. Bradley C C, Sackett C A, Tollett J J and Hulet R G 1995 Phys. Rev. Lett. 75 1687
17. Davis K B, Mewes M-O, Andrews M R, van Druten N J, Durfee D S, Kurn D M and W.Ketterle 1995 Phys. Rev. Lett. 75 3969
18. Kawaura H, Sakamoto T, Baba T, Ochiai Y, Fujita J, Matsui S and Sone J 1998 IEEE Electron Device Lett. 19 74
19. Noda H, Murai F and Kimura S 1993 IEDM Tech. Dig. 123
20. For a review, see, for example, Averin D V and Likharev K K 1991 Mesoscopic Phenomena in Solids ed B L Al'tshuler, P A Lee and R A Webb (Amsterdam: North-Holland) ch 6
21. Yano K, Ishii T, Hashimoto T, Kobayashi T, Murai F and Seki K 1993 Tech. Dig. Int. Electron Devices Meet. 541
22. Takahashi Y, Nagase M, Namatsu H, Kurihara K, Iwadate K, Nakajima Y, Horiguchi S, Murase K and Tabe M 1995 Electron. Lett. 31 136
23. Nakamura Y, Chen C D and Tsai J S 1996 Japan. J. Appl. Phys. 35 L1465
24. Dresselhaus P D, Ji L, Han S, Lukens J E and Likharev K K 1994 Phys. Rev. Lett. 72 3226
25. Likharev K K and Korotkov A N 1995 Proc. IWCE '95 (Tempe, AZ)