A Novel High-Q and Wide-Frequency-Range Inductor Using Si 3-D MMIC Technology

IEEE Microwave and Guided Wave Letters

Volumn 9, Issue 1, 1999, Pages 16-18

  Kamogawa, Kenji ^a   Nishikawa, Kenjiro ^a   Toyoda, Ichihiko ^a   Tokumitsu, Tsuneo ^a   Tanaka, Masayoshi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NATURAL FREQUENCIES; Q FACTOR MEASUREMENT; SILICON WAFERS; THICK FILMS;

LUMPED-ELEMENT MICROWAVE CIRCUITS;

ELECTRIC INDUCTORS;

EID: 0032636447     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.752110     Document Type: Article

References (15)

1. A. C. Reyes, S. M. El-Ghazrly, S. J. Dorn, M. Dydyk, D. K. Schroder, and H. Patterson, “HighQ inductors for wireless applications in a complementary silicon bipolar process,” IEEE Trans. Microwave Theory Tech., vol. 43, pp. 2016-2022, Sept. 1995
2. K. B. Ashby, I. A. Koullias, W. C. Finley, J. J. Bastek, and S. Moinian, “High Q inductors for wireless applications in a complementary silicon bipolar process,” J. Solid-State Circuits, vol. 31, no. 1, Jan. 1996
3. G. Ponchak, A. N. Downey, and P. B. Katehi, “High frequency interconnects on silicon substrates,” in 1998 IEEE Radio Frequency Integrated Circuits Symp. Dig., Baltimore, MD, June 1998,pp. 17-20
4. M. Soyuer, J. N. Burghartz, H. A. Ainspan, and K. A. Jenkins, “An 11-Ghz 3V SiGe voltage controlled oscillator with integrated resonator,” J. Solid-State Circuits, vol. 32, no. 9, Sept. 1997
5. C. M. Nam and Y. S. Kwon, “High-performance planar inductor on thick oxidized porous silicon(OPS) substrate,” IEEE Microwave Guided Wave Lett., vol. 7, pp. 236-238, Aug. 1997
6. J. N. Burghartz, M. Soyuer, and K. A. Jenkins, “Microwave inductors and capacitors in standard multilevel interconnect silicon technology,” IEEE Trans. Microwave Theory Tech., vol. 44,pp. 100-104, Jan. 1996
7. M. Park, S. Lee, H. K. Yu, J. G. Koo, and K. S. Nam, “High Q CMOScompatible microwave inductors using double-metal interconnection silicon technology,” IEEE Microwave Guided Wave Lett., vol. 7, pp. 45-47, Feb. 1997
8. J.Y.-C. Chang, A. A. Abidi, and M. Gaitan, “Large suspended inductors on silicon and their use in a 2 µm CMOS RF amplifier,” IEEE Electron Device Lett., vol. 14, no. 5, pp. 246-248, May 1993
9. R. A. Johnson, C. E. Chang, P. M. Asbeck, M. E. Wood, G. A. Garcia, and I. Lagnado, “Comparison of microwave inductors fabricated on silicon-on-sapphire and bulk silicon,” IEEE Microwave Guided Wave Lett., vol. 6, pp. 323-325, Sept. 1996
10. I. Toyoda, K. Nishikawa, T. Tokumitsu, K. Kamogawa, C. Yamoguchi, M. Hirano, and M. Aikawa, “Three-dimensional masterslice MMIC on Si substrate,” IEEE Trans. Microwave Theory Tech., vol. 45, pp. 2524-2530, Dec. 1997
11. K. Nishikawa, I. Toyoda, K. Kamogawa, and T. Tokumitsu, “Threedimensional silicon MMIC's operating up to K-band,” IEEE Trans. Microwave Theory Tech., vol. 46, pp. 677-684, May 1997
12. K. Kamogawa, K. Nishikawa, C. Yamaguchi, M. Hirano, I. Toyoda, and T. Tokumitsu, “Wide-tuning range Si bipolar VCO's based on threedimensional MMIC technology,” IEEE Trans. Microwave Theory Tech., vol. 45, pp. 2436-2443, Dec. 1997
13. C. Yamaguchi, Y. Kobayashi, M. Miyake, K. Ishii, and H. Ichino, “0.5 µm bipolar technology using a new base formation method: SST1C,” in IEEE 1993 Bipolar Circuits and Technology Meeting 4.2, pp. 63-66
14. M. Hirano, K. Nishikawa, I. Toyoda, S. Aoyama, S. Sugitani, and K. Yamasaki, “Three-dimensional passive circuit technology for ultracompact MMIC's,” IEEE Trans. Microwave Theory Tech., vol. 43, pp. 2845-2850, Dec. 1995
15. L. H. Lu, J. S. Rieh, P. Bhattacharya, and P. B. Katehi, “K-band Si/SiGe HBT MMIC amplifier using lumped passive component with a micromachined structure,” in 1998 IEEE Radio Frequency Integrated Circuits Symp. Dig., Baltimore, MD, June 1998, pp. 17-20