Properties of c-axis-oriented freestanding GaN substrates prepared on fused silica glass by hydride vapor phase epitaxy

Journal of the Korean Physical Society

Volumn 33, Issue 1, 1998, Pages

  Kim, S T ^a   Lee, Y J ^a   Moon, D C ^b  

^a Daejon National University of Technology   (South Korea)

^b Kwangwoon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 18844449716     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

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