Tensile strain relaxation in GaNxP1-x (x≤0.1) grown by chemical beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 4, 1996, Pages 2952-2956

  Li, N Y ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001217877     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588941     Document Type: Article

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