Optical transitions and recombination lifetimes in GaN and InGaN epilayers, and InGaN/GaN and GaN/AlGaN multiple quantum wells

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 829-834

  Smith, M ^a   Lin, J Y ^a   Jiang, H X ^a   Khan, A ^a   Chen, Q ^a   Salvador, A ^a   Botchkarev, A ^a   Morhoc, H ^a  

^a KANSAS STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INTERMETALLICS; SEMICONDUCTOR QUANTUM WELLS;

MULTIPLE QUANTUM WELLS; RADIATIVE RECOMBINATION; TIME RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030644695     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)