Low-load indentation behavior of HfN thin films deposited by reactive rf sputtering

Journal of Materials Research

Volumn 12, Issue 1, 1997, Pages 64-69

  Nowak, R ^a   Li, C L ^a   Maruno, S ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; DEFORMATION; ELASTICITY; HARDNESS; HYSTERESIS; MORPHOLOGY; NANOTECHNOLOGY; PLASTICITY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SPUTTER DEPOSITION; THIN FILMS;

HAFNIUM NITRIDE; HYSTERESIS LOOP; INDENTATION; REACTIVE SPUTTERING;

HAFNIUM COMPOUNDS;

EID: 0030783946     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1997.0011     Document Type: Article

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