Residual strain dependence of stimulated emission in GaN layers grown on (0001) sapphire substrates

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 9 PART A/B, 1998, Pages

  Funato, Kenji ^a   Nakamura, Fumihiko ^a   Hashimoto, Shigeki ^a   Ikeda, Masao ^a  

^a SONY CORPORATION   (Japan)

Author keywords

Dislocation; GaN; Heterostructure; Lattice constant; Metalorganic chemical vapor deposition; Stimulated emission; Strain relaxation; Thermal strain

Indexed keywords

DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PUMPING; PLASTIC DEFORMATION; RESIDUAL STRESSES; SEMICONDUCTOR GROWTH; STIMULATED EMISSION; STRESS RELAXATION; THERMAL STRESS; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRATE; NONRADIATIVE RECOMBINATION; SAPPHIRE SUBSTRATES; THRESHOLD POWER DENSITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032154674     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l1023     Document Type: Article

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