A new FET-based integrated circuit technology: The SASSFET

IEEE Electron Device Letters

Volumn 17, Issue 7, 1996, Pages 375-377

  Parikh, P A ^b   Jiang, W N ^b   Chavarkar, P M ^b   Kiziloglu, K ^b   Keller, B ^b   DenBaars, S P ^b   Mishra, U K ^a,b  

^a IEEE

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYING; ELECTRIC CONTACTS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLITHOGRAPHY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE;

DRAIN CONTACTS; EPISTRUCTURE; FET BASED INTEGRATED CIRCUIT TECHNOLOGY; HIGH SPEED GALLIUM ARSENIDE CIRCUITS; INDIUM PHOSPHIDE CIRCUITS; NANOALLOYED SOURCE; SELF ALIGNED SUBMICRON SINGLE METAL FIELD EFFECT TRANSISTORS;

INTEGRATED CIRCUITS;

EID: 0030182536     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.506372     Document Type: Article

References (6)

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