메뉴 건너뛰기




Volumn 34, Issue 16, 1998, Pages 1587-1588

CW operation of 3.4μm optically-pumped type-II W laser to 220K

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; LIGHT EMISSION; THERMOELECTRICITY;

EID: 0032490809     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981136     Document Type: Article
Times cited : (6)

References (11)
  • 2
    • 0030142623 scopus 로고    scopus 로고
    • 175K continuous wave operation of InAsSb/InAlAsSb quantum-well lasers emitting at 3.5μm
    • CHOI, H.K., TURNER, G.W., MANFRA, M.J., and CONNORS, M.K.: '175K continuous wave operation of InAsSb/InAlAsSb quantum-well lasers emitting at 3.5μm', Appl. Phys. Lett., 1996, 68, (21), pp. 2936-2938
    • (1996) Appl. Phys. Lett. , vol.68 , Issue.21 , pp. 2936-2938
    • Choi, H.K.1    Turner, G.W.2    Manfra, M.J.3    Connors, M.K.4
  • 3
    • 11744367772 scopus 로고    scopus 로고
    • Private communication
    • FAIST, J.: Private communication
    • Faist, J.1
  • 4
    • 0029638629 scopus 로고
    • Type-II quantum-well lasers for the mid-wavelength infrared
    • MEYER, J.R., HOFFMAN, C.A., BARTOLI, F.J., and RAM-MOHAN, L.R.: 'Type-II quantum-well lasers for the mid-wavelength infrared', Appl. Phys. Lett., 1995, 67, (6), pp. 757-759
    • (1995) Appl. Phys. Lett. , vol.67 , Issue.6 , pp. 757-759
    • Meyer, J.R.1    Hoffman, C.A.2    Bartoli, F.J.3    Ram-Mohan, L.R.4
  • 8
    • 0031140509 scopus 로고    scopus 로고
    • Controlled solder interdiffusion for high power semiconductor laser diode die bonding
    • MERRITT, S.A., HEIM, P.J.S., CHO, S.H., and DAGENAIS, M.: 'Controlled solder interdiffusion for high power semiconductor laser diode die bonding', IEEE Trans. Compon. Packag. Manuf. Technol., 1997, B20, (2), pp. 141-145
    • (1997) IEEE Trans. Compon. Packag. Manuf. Technol. , vol.B20 , Issue.2 , pp. 141-145
    • Merritt, S.A.1    Heim, P.J.S.2    Cho, S.H.3    Dagenais, M.4
  • 9
    • 0031165815 scopus 로고    scopus 로고
    • Midinfrared lasers and light-emitting diodes with InAsSb/InAsP strained-layer superlattice active regions
    • KURTZ, S.R., ALLERMAN, A.A., and BIEFELD, R.M.: 'Midinfrared lasers and light-emitting diodes with InAsSb/InAsP strained-layer superlattice active regions', Appl. Phys. Lett., 1997, 70, (24), pp. 3188-3190
    • (1997) Appl. Phys. Lett. , vol.70 , Issue.24 , pp. 3188-3190
    • Kurtz, S.R.1    Allerman, A.A.2    Biefeld, R.M.3
  • 10
    • 0030569842 scopus 로고    scopus 로고
    • Low threshold PbEuSeTe/PbTe separate confinement buried heterostructure diode lasers
    • FEIT, Z., MCDONALD, M., WOODS, R.J., ARCHAMBAULT, V., and MAK, P.: 'Low threshold PbEuSeTe/PbTe separate confinement buried heterostructure diode lasers', Appl. Phys. Lett., 1996, 68, (6), pp. 738-740
    • (1996) Appl. Phys. Lett. , vol.68 , Issue.6 , pp. 738-740
    • Feit, Z.1    Mcdonald, M.2    Woods, R.J.3    Archambault, V.4    Mak, P.5
  • 11
    • 3643131279 scopus 로고    scopus 로고
    • High-power high-efficiency quasi-CW Sb-based mid-IR lasers using 1.9μm laser diode pumping
    • LE, H.Q., TURNER, G.W., and OCHOA, J.R.: 'High-power high-efficiency quasi-CW Sb-based mid-IR lasers using 1.9μm laser diode pumping', IEEE Photonics Technol. Lett., 1998, 10, (5), pp. 663-665
    • (1998) IEEE Photonics Technol. Lett. , vol.10 , Issue.5 , pp. 663-665
    • Le, H.Q.1    Turner, G.W.2    Ochoa, J.R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.