Controlled solder interdiffusion for high power semiconductor laser diode die bonding

IEEE Transactions on Components Packaging and Manufacturing Technology Part B

Volumn 20, Issue 2, 1997, Pages 141-145

  Merritt, Scott A ^a,b   Heim, Peter J S ^b   Cho, Si Hyung ^b   Dagenais, Mario ^a,b  

^a IEEE   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

Author keywords

Angle facet; Die bonding; High power; Interdiffusion; Optical amplifiers; Semiconductor laser diodes; Specific thermal resistance

Indexed keywords

DIES; HEAT RESISTANCE; HEAT SINKS; HEAT TRANSFER; OPTICAL FIBERS; POWER AMPLIFIERS; SEMICONDUCTOR LASERS;

DIE ATTACH METHOD; SOLDER INTERDIFFUSION;

SOLDERING;

EID: 0031140509     PISSN: 10709894     EISSN: None     Source Type: Journal    
DOI: 10.1109/96.575565     Document Type: Article

References (18)

1. R. L. Hartman and A. R. Hartman, "Strain-induced degradation of GaAs injection lasers," Appl. Phys. Lett., vol. 23, no. 3, pp. 147-149, Aug. 1973.
2. S. H. Cho, S. Fox, S. A. Merritt, P. J. S. Heim, B. Gopalan, S. Kareenahalli, V. Vusirikala, C. E. C. Wood, and M. Dagenais, "Near-ideal diffraction-limited beam from a 970 nm high-power angled-facet tapered semiconductor optical amplifier," in Proc. OSA Optical Amplifier Topical Meet., Daves, Switzerland, 1995.
3. R. J. Lang, A. Hardy, R. Parke, D. Mehuys, S. O'Brien, J. Major, and D. Welch, "Numerical analysis of flared semiconductor laser amplifiers," IEEE J. Quantum Electron., vol. 29, pp. 2044-2051, June 1993.
4. H. Brugger and P. W. Epperlein, "Mapping of local temperatures on mirrors of GaAs/AlGaAs laser diodes," Appl. Phys. Lett., pp. 1049-1051, Mar. 1990.
5. F. P. Dabkowski, A. K. Chin, P. Gavrilovic, S. Alie, and D. M. Beyea, "Temperature profile along the cavity axis of high power quantum well lasers during operation," Appl. Phys. Lett., pp. 13-15, Jan. 1994.
6. O. J. F. Martin, G. Bona, and P. Wolf, "Thermal behavior of visible AlGaInP-GaInP ridge laser diodes," IEEE J. Quantum Electron., vol. 28, pp. 2582-2588, Nov. 1992.
7. M. Fukuda, Reliability and Degradation of Semiconductor Lasers and LEDs. Norwood, MA: Artech House, 1991, ch. 9, p. 311.
8. S. P Sim, "A review of the reliability of III-V opto-electronic components," Semiconductor Device Reliability, A. Christou and B. A. Unger, Eds., Norwell, MA: Kluwer, 1990, pp. 301-319.
9. J. L. Freer and J. W. Morris, Jr., "Microstructure and creep of eutectic Indium/Tin on copper and nickel substrates," J. Electron. Mater., vol. 21, no. 6, pp. 647-652, 1992.
10. C. Wang, "A new bonding technology using gold-tin multilayer composites for microelectronics and photonics," Ph.D. dissertation, University of California, Irvine, 1992.
11. K. Seelig, D. Sklarski, L. Johnson, and J. Sartell, "The advantages of low melting temperature solder when applied to plated-through hole technology," in Proc. NEPCON East, Boston, MA, June 1987.
12. K. Seelig, "Practical guide to the use of indium/lead solders," Inside ISHM, Jan./Feb. 1989.
13. T. B. Massalski, Binary Alloy Phase Diagrams, vol. 2. American Society of Metals, 1986.
14. K. Fujiwara, H. Imai, T. Fujiwar, K. Hori, and M. Takusagawa, "Analysis of deterioration in in solder used for GaAlAs DH lasers," Appl. Phys. Lett., pp. 861-863, Dec. 1979.
15. S. A. Merritt, P. J. S. Heim, S. Cho, and M. Dagenais, "A reliable die attach method for high power semiconductor lasers and optical amplifiers," in Proc. 45th Electron. Comp. Technol. Conf., Las Vegas, NV, May 21-24, 1995, pp. 428-430.
16. T. L. Paoli, "A new technique for measuring the thermal resistance of junction lasers," IEEE J. Quantum Electron., pp. 498-503, July 1975.
17. M. Sakamoto, J. G. Endritz, and D. R. Scifres, "120 W CW output power from monolithic AlGaAs (800nm) laser diode array mounted on diamond heatsink," Electron. Lett., vol. 28, no. 2, pp. 197-199, Jan. 1992.
18. C. Zweben and K. A. Schmidt, "Heatsinks," in Electronic Materials Handbook, vol. 1. ASM International, 1989, pp. 1129-1131.