메뉴 건너뛰기




Volumn 10, Issue 3, 1998, Pages 663-665

High-power high-efficiency quasi-CW Sb-based mid-IR lasers using 1.9-μm laser diode pumping

Author keywords

Diode pumping; Laser efficiency; Mid infrared lasers; Narrow gap semiconductors; Optical pumping; Semiconductor lasers

Indexed keywords


EID: 3643131279     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (6)

References (14)
  • 3
    • 0030571395 scopus 로고    scopus 로고
    • A turnkey liquid-nitrogen-cooled 3.9-μm semiconductor laser package with 0.2-W CW output
    • H. Q. Le, G. W. Turner, and J. R. Ochoa, "A turnkey liquid-nitrogen-cooled 3.9-μm semiconductor laser package with 0.2-W CW output," Electron. Lett., vol. 32, pp. 2359-2360, 1996.
    • (1996) Electron. Lett. , vol.32 , pp. 2359-2360
    • Le, H.Q.1    Turner, G.W.2    Ochoa, J.R.3
  • 4
    • 3643076944 scopus 로고    scopus 로고
    • unpublished
    • H. Q. Le, unpublished.
    • Le, H.Q.1
  • 5
    • 0028547371 scopus 로고
    • High-efficiency, high-temperature mid-infrared (λ ≥ 4 μm) InAsSb/GaSb lasers
    • H. Q. Le, G. W. Turner, J. R. Ochoa, and A. Sanchez, "High-efficiency, high-temperature mid-infrared (λ ≥ 4 μm) InAsSb/GaSb lasers," Electron. Lett., vol. 28, pp. 1944-1945, 1994.
    • (1994) Electron. Lett. , vol.28 , pp. 1944-1945
    • Le, H.Q.1    Turner, G.W.2    Ochoa, J.R.3    Sanchez, A.4
  • 6
    • 0030568681 scopus 로고    scopus 로고
    • High CW power (>200 mW/facet) at 3.4 μm from InAsSb/InAlAsSb strained quantum well diode lasers
    • H. K. Choi, G. W. Turner, and M. J. Manfra, "High CW power (>200 mW/facet) at 3.4 μm from InAsSb/InAlAsSb strained quantum well diode lasers," Electron. Lett., vol. 32, pp. 1296-1297, 1996.
    • (1996) Electron. Lett. , vol.32 , pp. 1296-1297
    • Choi, H.K.1    Turner, G.W.2    Manfra, M.J.3
  • 9
    • 0030146288 scopus 로고    scopus 로고
    • High power InAsSb/InAsSbP double heterostructure laser for continuous wave operation at 3.6 μm
    • A. Popov, V. Sherstnev, Y. Yakovlev, R. Mucke, and P. Werle, "High power InAsSb/InAsSbP double heterostructure laser for continuous wave operation at 3.6 μm," Appl. Phys. Lett., vol. 68, pp. 2790-2792, 1996.
    • (1996) Appl. Phys. Lett. , vol.68 , pp. 2790-2792
    • Popov, A.1    Sherstnev, V.2    Yakovlev, Y.3    Mucke, R.4    Werle, P.5
  • 13
    • 77957023161 scopus 로고
    • Thermal conductivity
    • R. K. Willardson and A. C. Beer, Eds. New York: Academic
    • M. G. Holland, "Thermal conductivity;" in Semiconductor and Semimetals, vol. 2, R. K. Willardson and A. C. Beer, Eds. New York: Academic, 1966, pp. 3-31.
    • (1966) Semiconductor and Semimetals , vol.2 , pp. 3-31
    • Holland, M.G.1
  • 14
    • 3643071634 scopus 로고
    • Heat capacity and Debye temperature
    • R. K. Willardson and A. C. Beer, Eds. New York: Academic
    • U. Piesbergen, "Heat capacity and Debye temperature," in Semiconductor and Semimetals, vol. 2, R. K. Willardson and A. C. Beer, Eds. New York: Academic, 1966, pp. 49-60.
    • (1966) Semiconductor and Semimetals , vol.2 , pp. 49-60
    • Piesbergen, U.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.