-
1
-
-
3643133085
-
-
unpublished
-
H. Q. Le, G. W. Turner, V. Daneu, J. R. Ochoa, H. K. Choi, A. Sanchez, D. L. Spears, and T. Y. Fan, unpublished.
-
-
-
Le, H.Q.1
Turner, G.W.2
Daneu, V.3
Ochoa, J.R.4
Choi, H.K.5
Sanchez, A.6
Spears, D.L.7
Fan, T.Y.8
-
2
-
-
0029222155
-
High-power diode-pumped mid-infrared semiconductor lasers
-
H. Q. Le, G. W. Turner, H. K. Choi, J. R. Ochoa, A. Sanchez, J. M. Arias, M. Zandian, R. R. Zucca, and Y,-Z. Liu, "High-power diode-pumped mid-infrared semiconductor lasers," Proc. SPIE, vol. 2382, pp. 262-272, 1995.
-
(1995)
Proc. SPIE
, vol.2382
, pp. 262-272
-
-
Le, H.Q.1
Turner, G.W.2
Choi, H.K.3
Ochoa, J.R.4
Sanchez, A.5
Arias, J.M.6
Zandian, M.7
Zucca, R.R.8
Liu, Y.-Z.9
-
3
-
-
0030571395
-
A turnkey liquid-nitrogen-cooled 3.9-μm semiconductor laser package with 0.2-W CW output
-
H. Q. Le, G. W. Turner, and J. R. Ochoa, "A turnkey liquid-nitrogen-cooled 3.9-μm semiconductor laser package with 0.2-W CW output," Electron. Lett., vol. 32, pp. 2359-2360, 1996.
-
(1996)
Electron. Lett.
, vol.32
, pp. 2359-2360
-
-
Le, H.Q.1
Turner, G.W.2
Ochoa, J.R.3
-
4
-
-
3643076944
-
-
unpublished
-
H. Q. Le, unpublished.
-
-
-
Le, H.Q.1
-
5
-
-
0028547371
-
High-efficiency, high-temperature mid-infrared (λ ≥ 4 μm) InAsSb/GaSb lasers
-
H. Q. Le, G. W. Turner, J. R. Ochoa, and A. Sanchez, "High-efficiency, high-temperature mid-infrared (λ ≥ 4 μm) InAsSb/GaSb lasers," Electron. Lett., vol. 28, pp. 1944-1945, 1994.
-
(1994)
Electron. Lett.
, vol.28
, pp. 1944-1945
-
-
Le, H.Q.1
Turner, G.W.2
Ochoa, J.R.3
Sanchez, A.4
-
6
-
-
0030568681
-
High CW power (>200 mW/facet) at 3.4 μm from InAsSb/InAlAsSb strained quantum well diode lasers
-
H. K. Choi, G. W. Turner, and M. J. Manfra, "High CW power (>200 mW/facet) at 3.4 μm from InAsSb/InAlAsSb strained quantum well diode lasers," Electron. Lett., vol. 32, pp. 1296-1297, 1996.
-
(1996)
Electron. Lett.
, vol.32
, pp. 1296-1297
-
-
Choi, H.K.1
Turner, G.W.2
Manfra, M.J.3
-
7
-
-
0345777094
-
Type-II mid-infrared quantum well lasers
-
J. L. Malin, J. R. Meyer, C. L. Felix, C. A. Hoffman, L. Goldberg, F. J. Bartoli, C.-H. Lin, P. C. Chang, S. J. Murry, R. Q. Yang, and S.-S. Pei, "Type-II mid-infrared quantum well lasers," Appl. Phys. Lett., vol. 68, pp. 2976-2978, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 2976-2978
-
-
Malin, J.L.1
Meyer, J.R.2
Felix, C.L.3
Hoffman, C.A.4
Goldberg, L.5
Bartoli, F.J.6
Lin, C.-H.7
Chang, P.C.8
Murry, S.J.9
Yang, R.Q.10
Pei, S.-S.11
-
8
-
-
21544464001
-
High power mid-infrared (λ ∼ 5 μm) quantum cascade lasers operating above room-temperature
-
J. Faist, F. Capasso, C. Sirtori, A. L. Hutchinson, D. L. Sivco, J. N. Baillargeon, A. L. Hutchinson, S.-N. G. Chu, and A. Y. Cho, "High power mid-infrared (λ ∼ 5 μm) quantum cascade lasers operating above room-temperature," Appl. Phys. Lett., vol. 68, pp. 3680-3682, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 3680-3682
-
-
Faist, J.1
Capasso, F.2
Sirtori, C.3
Hutchinson, A.L.4
Sivco, D.L.5
Baillargeon, J.N.6
Hutchinson, A.L.7
Chu, S.-N.G.8
Cho, A.Y.9
-
9
-
-
0030146288
-
High power InAsSb/InAsSbP double heterostructure laser for continuous wave operation at 3.6 μm
-
A. Popov, V. Sherstnev, Y. Yakovlev, R. Mucke, and P. Werle, "High power InAsSb/InAsSbP double heterostructure laser for continuous wave operation at 3.6 μm," Appl. Phys. Lett., vol. 68, pp. 2790-2792, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 2790-2792
-
-
Popov, A.1
Sherstnev, V.2
Yakovlev, Y.3
Mucke, R.4
Werle, P.5
-
10
-
-
0029253732
-
xSb/InAs superlattice diode laser
-
xSb/InAs superlattice diode laser," Electron. Lett., vol. 31, pp. 275-276 1995.
-
(1995)
Electron. Lett.
, vol.31
, pp. 275-276
-
-
Hasenberg, T.C.1
Chow, D.H.2
Kost, A.R.3
Miles, R.H.4
West, L.5
-
11
-
-
0031588260
-
High power mid-IR interband cascade lasers based on type-II quantum wells
-
to be published
-
R. Q. Yang, B. H. Yang, D. Zhang, C. H. Lin, S. J. Murry, H. Wu, and S. S. Pei, "High power mid-IR interband cascade lasers based on type-II quantum wells," Appl. Phys. Lett., to be published.
-
Appl. Phys. Lett.
-
-
Yang, R.Q.1
Yang, B.H.2
Zhang, D.3
Lin, C.H.4
Murry, S.J.5
Wu, H.6
Pei, S.S.7
-
12
-
-
0000202295
-
InAsSbP/InAsSb/InAs laser diodes (λ = 3.2 μm) grown by low-pressure metal-organic chemical vapor deposition
-
J. Diaz, H. Yi, A. Rybaltowski, B. Lane, G. Lucas, D. Wu, S. Kim, M. Erdtmann, E. Kaas, and M. Razeghi, "InAsSbP/InAsSb/InAs laser diodes (λ = 3.2 μm) grown by low-pressure metal-organic chemical vapor deposition," Appl. Phys. Lett., vol. 70, pp. 40-42, 1997.
-
(1997)
Appl. Phys. Lett.
, vol.70
, pp. 40-42
-
-
Diaz, J.1
Yi, H.2
Rybaltowski, A.3
Lane, B.4
Lucas, G.5
Wu, D.6
Kim, S.7
Erdtmann, M.8
Kaas, E.9
Razeghi, M.10
-
13
-
-
77957023161
-
Thermal conductivity
-
R. K. Willardson and A. C. Beer, Eds. New York: Academic
-
M. G. Holland, "Thermal conductivity;" in Semiconductor and Semimetals, vol. 2, R. K. Willardson and A. C. Beer, Eds. New York: Academic, 1966, pp. 3-31.
-
(1966)
Semiconductor and Semimetals
, vol.2
, pp. 3-31
-
-
Holland, M.G.1
-
14
-
-
3643071634
-
Heat capacity and Debye temperature
-
R. K. Willardson and A. C. Beer, Eds. New York: Academic
-
U. Piesbergen, "Heat capacity and Debye temperature," in Semiconductor and Semimetals, vol. 2, R. K. Willardson and A. C. Beer, Eds. New York: Academic, 1966, pp. 49-60.
-
(1966)
Semiconductor and Semimetals
, vol.2
, pp. 49-60
-
-
Piesbergen, U.1
|