Midinfrared lasers and light-emitting diodes with InAsSb/InAsP strained-layer superlattice active regions

Applied Physics Letters

Volumn 70, Issue 24, 1997, Pages 3188-3190

  Kurtz, S R ^a   Allerman, A A ^a   Biefeld, R M ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; EPITAXIAL GROWTH; HETEROJUNCTIONS; LIGHT EMITTING DIODES; LIQUID PHASE EPITAXY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PUMPING; PHOTOLUMINESCENCE; Q SWITCHED LASERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; X RAY DIFFRACTION;

BAND ALIGNMENTS; DOUBLE CRYSTAL X RAY DIFFRACTION; MAGNETOPHOTOLUMINESCENCE; QUANTUM CONFINEMENT;

SEMICONDUCTOR SUPERLATTICES;

EID: 0031165815     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119154     Document Type: Article

References (17)

1. S. R. Kurtz, R. M. Biefeld, L. R. Dawson, K. C. Baucom, and A. J. Howard, Appl. Phys. Lett. 64, 812 (1994).
2. H. K. Choi and G. W. Turner, Appl. Phys. Lett. 67, 332 (1995).
3. D. Z. Garbuzov, R. U. Martinelli, R. J. Menna, P. K. York, H. Lee, S. Y. Narayan, and J. C. Connolly, Appl. Phys. Lett. 67, 1346 (1995).
4. Y. H. Zhang, Appl. Phys. Lett. 66, 118 (1995).
5. D. H. Chow, R. H. Miles, T. C. Hasenberg, A. R. Kost, Y.-H. Zhang, H. L. Dunlap, and L. West, Appl. Phys. Lett. 67, 3700 (1995).
6. H. K. Choi, G. W. Turner, M. J. Manfra, and M. K. Connors, Appl. Phys. Lett. 68, 2936 (1996).
7. J. I. Malin, J. R. Meyer, C. L. Felix, J. R. Lindle, L. Goldberg, C. A. Hoffman, F. J. Bartoli, C. H. Lin, P. C. Chang, S. J. Murry, R. Q. Yang, and S. S. Pei, Appl. Phys. Lett. 68, 2976 (1996).
8. A. A. Allerman, R. M. Biefeld, and S. R. Kurtz, Appl. Phys. Lett. 69, 465 (1996).
9. R. J. Menna, D. Garbuznov, R. U. Martinelli, and G. H. Olsen (unpublished).
10. S. R. Kurtz, R. M. Biefeld, and A. J. Howard, Appl. Phys. Lett. 67, 3331 (1995).
11. H. P. Hjalmarson and S. R. Kurtz, Appl. Phys. Lett. 69, 949 (1996).
12. S. R. Kurtz and R. M. Biefeld, Appl. Phys. Lett. 66, 364 (1995).
13. C. G. Van de Walle, Phys. Rev. B 39, 1871 (1989).
14. Our device was compared with a 4.2 μm LED obtained from RMC Ltd., Moscow, Russia.
15. H. K. Choi, G. W. Turner, and H. Q. Le, Inst. Phys. Conf. Ser. 144, 209 (1995).
16. C. L. Felix, J. R. Meyer, I. Vurgaftman, C. H. Lin, S. J. Murry, D. Zhang, and S. S. Pei, Photonics Tech. Lett. (to be published).
17. H. Q. Le, G. W. Turner, J. R. Ochoa, and A. Sanchez, Electron. Lett. 30, 1944 (1994).