Optimization of p-dopant profiles for GaInAsP MQW laser structures in MOMBE

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 660-667

  Kroner P ^a   Baumeister, H ^a   Rieger, J ^a   Veuhoff, E ^a   Popp, M ^a,b   Heinecke, H ^b  

^a SIEMENS AG   (Germany)

^b UNIVERSITY OF ULM   (Germany)

Author keywords

CBE; Doping; GaInAsP; MOMBE; MOVPE; MQW lasers; SIMS

Indexed keywords

CHEMICAL BEAM EPITAXY; FERMI LEVEL; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; ZINC;

GALLIUM INDIUM ARSENIDE PHOSPHIDE; METALLORGANIC MOLECULAR BEAM EPITAXY (MOMBE);

QUANTUM WELL LASERS;

EID: 0032477122     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00642-3     Document Type: Article

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