1.3-μm InP-based quantum-well lasers with n-doped separate confinement heterostructure layers for high-temperature operation

IEEE Photonics Technology Letters

Volumn 10, Issue 2, 1998, Pages 200-202

  Seki, Shunji ^a,b   Yokoyama, Kiyoyuki ^a,b  

^a IEEE   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

Indium materials devices; Quantum well lasers; Semiconductor device modeling; Semiconductor lasers

Indexed keywords

HETEROJUNCTIONS; HIGH TEMPERATURE OPERATIONS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

SEPARATE CONFINEMENT HETEROSTRUCTURES (SCH);

QUANTUM WELL LASERS;

EID: 0031999343     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.655357     Document Type: Article

References (10)

1. J. Yoshida, "Low-cost optical transceivers for access networks," in Tech. Dig. Optical Fiber Communication Conf., Dallas, TX, 1997, pp. 275-276.
2. P. J. A. Thijs, T. van Dongen, L. F. Tiemeijer, and J. J. M. Binsma, "High-performance λ = 1.3 μm/InGaAsP-InP strained-layer quantum well lasers," IEEE J. Lightnave Technol., vol. 12, pp. 28-37, 1994.
3. H. Oohashi, S. Seki, T. Hirono, H. Sugiura, T. Amano, M. Ueki. J. Nakano, M. Yamamoto, Y Tohmori, M. Fukuda, and K. Yokoyama, "High-power and high-efficiency 1.3 μm InAsP compressively-strained MQW lasers at high temperatures," Electron. Lett., vol. 31, pp. 556-557, 1995.
4. 0 in 1.3 μm/multi-quantum-well and bukl active lasers," Appl. Phys. Lett., vol. 66, pp. 2613-2615, 1995.
5. W. S. Ring, H. Lage. A. J. Taylor, I. S. Smith, and R. M. Ash, "Optimization of highly efficient uncoated strained 1300-nm InGaAsP MQW lasers for uncooled high-temperature operation," in Tech. Dig. Optical Fiber Communication Conf., San Jose, CA, 1996, pp. 230-231.
6. S. Seki, H Oohashi, H. Sugiura, T. Hirono, and K. Yokoyama, "Dominant mechanisms for the temperature sensitivity of threshold current in 1.3-μm InP-based strained-layer quantum-well lasers," Appl. Phys. Lett., vol. 67, pp. 1054-1056, 1995.
7. V. Mikhaelashvili, N. Tessler, R. Nagar, G. Eisenstein, A. G. Dentai, S. Chandrasakhar, and C. H. Joyner, "Temperature dependent loss and overflow effects in quantum well lasers," IEEE Photon. Technol. Lett., vol. 6, pp. 1293-1296. 1994.
8. A. A. Bernussi, J. Pikal, H. Temkin, D. L. Coblentz, and R. A. Logan, "Effect of barrier recombination on the high temperature performance of quarternary multiple quantum well lasers," Appl. Phys. Lett., vol. 66, pp. 67-69, 1995.
9. S. Seki and K. Yokoyama, "Power penalty in 1.3-μm InP-based strained-layer multiple-quantum-well lasers at elevated temperatures," IEEE Photon. Technol. Lett., vol. 9, pp. 1205-1207, 1997.
10. S. Seki, H Oohashi, H. Sugiura, T. Hirono, and K. Yokoyama, "Study on the dominant mechanisms for the temperature sensitivity of threshold current in 1.3-μm InP-based strained-layer quantum-well lasers," IEEE J. Quantum Electron., vol. 32, pp. 1478-1486, 1996.